A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Y. D. Zhao, J. J. Hu, P. Huang, F. Yuan, Yang Chai, X. Y. Liu, J. F. Kang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

8 Citations (Scopus)

Abstract

A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device-circuit-system co-design tool.
Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherIEEE
Pages7.6.1-7.6.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 31 Jan 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/TerritoryUnited States
CitySan Francisco
Period3/12/167/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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