A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Y. D. Zhao; J. J. Hu; P. Huang; F. Yuan; Yang Chai; X. Y. Liu; J. F. Kang

doi:10.1109/IEDM.2016.7838370

A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Y. D. Zhao, J. J. Hu, P. Huang, F. Yuan, Yang Chai, X. Y. Liu, J. F. Kang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

11 Citations (Scopus)

Abstract

A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device-circuit-system co-design tool.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	IEEE
Pages	7.6.1-7.6.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838370
Publication status	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1109/IEDM.2016.7838370

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@inproceedings{61f8ccd691044021a22c89ffffd7ba69,

title = "A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM",

abstract = "A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device-circuit-system co-design tool.",

author = "Zhao, {Y. D.} and Hu, {J. J.} and P. Huang and F. Yuan and Yang Chai and Liu, {X. Y.} and Kang, {J. F.}",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838370",

language = "English",

pages = "7.6.1--7.6.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

publisher = "IEEE",

address = "United States",

note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

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Zhao, YD, Hu, JJ, Huang, P, Yuan, F, Chai, Y, Liu, XY & Kang, JF 2017, A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838370, IEEE, pp. 7.6.1-7.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838370

A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM. / Zhao, Y. D.; Hu, J. J.; Huang, P. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE, 2017. p. 7.6.1-7.6.4 7838370.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Chai, Yang

AU - Liu, X. Y.

AU - Kang, J. F.

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AB - A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device-circuit-system co-design tool.

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A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

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