A physical thermal noise model for SOI MOSFET

Wei Jin, Philip Ching Ho Chan, Jack Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

35 Citations (Scopus)

Abstract

The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog 1C design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data.
Original languageEnglish
Pages (from-to)768-773
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume47
Issue number4
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes

Keywords

  • Carrier temperature
  • Lattice temperature
  • Mosfet model
  • SOI MOSFET
  • Thermal noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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