A physical thermal noise model for SOI MOSFET

Wei Jin; Philip Ching Ho Chan; Jack Lau

doi:10.1109/16.830992

A physical thermal noise model for SOI MOSFET

Wei Jin, Philip Ching Ho Chan, Jack Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

38 Citations (Scopus)

Abstract

The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog 1C design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data.

Original language	English
Pages (from-to)	768-773
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	4
DOIs	https://doi.org/10.1109/16.830992
Publication status	Published - 1 Dec 2000
Externally published	Yes

Keywords

Carrier temperature
Lattice temperature
Mosfet model
SOI MOSFET
Thermal noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/16.830992

Cite this

@article{beca7cac04c0403bbad7d0d6f3014992,

title = "A physical thermal noise model for SOI MOSFET",

abstract = "The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog 1C design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data.",

keywords = "Carrier temperature, Lattice temperature, Mosfet model, SOI MOSFET, Thermal noise",

author = "Wei Jin and Chan, {Philip Ching Ho} and Jack Lau",

year = "2000",

month = dec,

day = "1",

doi = "10.1109/16.830992",

language = "English",

volume = "47",

pages = "768--773",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "4",

}

TY - JOUR

T1 - A physical thermal noise model for SOI MOSFET

AU - Jin, Wei

AU - Chan, Philip Ching Ho

AU - Lau, Jack

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog 1C design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data.

AB - The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog 1C design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data.

KW - Carrier temperature

KW - Lattice temperature

KW - Mosfet model

KW - SOI MOSFET

KW - Thermal noise

UR - http://www.scopus.com/inward/record.url?scp=0033902171&partnerID=8YFLogxK

U2 - 10.1109/16.830992

DO - 10.1109/16.830992

M3 - Journal article

SN - 0018-9383

VL - 47

SP - 768

EP - 773

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

A physical thermal noise model for SOI MOSFET

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this