A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Zhen Yi Yang; Chi Wah Leung; P. T. Lai; P. W.T. Pong

doi:10.1109/ISNE.2016.7543340

A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Zhen Yi Yang, Chi Wah Leung, P. T. Lai, P. W.T. Pong

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

This work studies the influence of the Si/SiO2interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.

Original language	English
Title of host publication	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Publisher	IEEE
ISBN (Electronic)	9781509024391
DOIs	https://doi.org/10.1109/ISNE.2016.7543340
Publication status	Published - 12 Aug 2016
Event	5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan Duration: 4 May 2016 → 6 May 2016

Conference

Conference	5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/Territory	Taiwan
City	Hsinchu
Period	4/05/16 → 6/05/16

Keywords

interface traps
magnetic sensitivity
sectorial SD-MAGFETs
Si/SiO interface 2

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

More information

10.1109/ISNE.2016.7543340

http://hdl.handle.net/10397/100430

Cite this

@inproceedings{b717a66003d34bfab57b9e411a83c7b1,

title = "A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET",

abstract = "This work studies the influence of the Si/SiO2interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.",

keywords = "interface traps, magnetic sensitivity, sectorial SD-MAGFETs, Si/SiO interface 2",

author = "Yang, {Zhen Yi} and Leung, {Chi Wah} and Lai, {P. T.} and Pong, {P. W.T.}",

year = "2016",

month = aug,

day = "12",

doi = "10.1109/ISNE.2016.7543340",

language = "English",

booktitle = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",

publisher = "IEEE",

address = "United States",

note = "5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",

}

Yang, ZY, Leung, CW, Lai, PT & Pong, PWT 2016, A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET. in 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016., 7543340, IEEE, 5th International Symposium on Next-Generation Electronics, ISNE 2016, Hsinchu, Taiwan, 4/05/16. https://doi.org/10.1109/ISNE.2016.7543340

A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET. / Yang, Zhen Yi; Leung, Chi Wah; Lai, P. T. et al.
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. IEEE, 2016. 7543340.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

AU - Yang, Zhen Yi

AU - Leung, Chi Wah

AU - Lai, P. T.

AU - Pong, P. W.T.

PY - 2016/8/12

Y1 - 2016/8/12

N2 - This work studies the influence of the Si/SiO2interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.

AB - This work studies the influence of the Si/SiO2interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.

KW - interface traps

KW - magnetic sensitivity

KW - sectorial SD-MAGFETs

KW - Si/SiO interface 2

UR - http://www.scopus.com/inward/record.url?scp=84985993382&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2016.7543340

DO - 10.1109/ISNE.2016.7543340

M3 - Conference article published in proceeding or book

BT - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

PB - IEEE

T2 - 5th International Symposium on Next-Generation Electronics, ISNE 2016

Y2 - 4 May 2016 through 6 May 2016

ER -

A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Abstract

Conference

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this