A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Zhen Yi Yang, Chi Wah Leung, P. T. Lai, P. W.T. Pong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)


This work studies the influence of the Si/SiO2interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.
Original languageEnglish
Title of host publication2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
ISBN (Electronic)9781509024391
Publication statusPublished - 12 Aug 2016
Event5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan
Duration: 4 May 20166 May 2016


Conference5th International Symposium on Next-Generation Electronics, ISNE 2016


  • interface traps
  • magnetic sensitivity
  • sectorial SD-MAGFETs
  • Si/SiO interface 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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