Abstract
A study was presented on the fabrication and effects of a novel local bottom-gate carbon nanotube field effect transistor (CNFET) using SOI substrate. E-beam lithography and transmission electron microscopy (TEM) were used for the study. The results showed that the fabrication process is simple and individual device operation, lower operation voltage and better gate capacitive coupling can be achieved.
Original language | English |
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Title of host publication | IEEE International SOI Conference |
Pages | 63-64 |
Number of pages | 2 |
Publication status | Published - 6 Nov 2003 |
Externally published | Yes |
Event | 2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States Duration: 29 Sept 2003 → 2 Oct 2003 |
Conference
Conference | 2003 IEEE International SOI Conference Proceedings |
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Country/Territory | United States |
City | Newport Beach, CA |
Period | 29/09/03 → 2/10/03 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering