A novel hydrogen sensor based on Pt/WO3/Si MIS Schottky diode

Y. Liu, J. Yu, F. X. Cai, Wing Man Tang, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

2 Citations (Scopus)

Abstract

In this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a Pt/WO3/n-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The WO3 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was studied by an atomic force microscopy (AFM) and the scan results indicated a smooth film with a roughness of 0.18 Å. From the X-ray photoelectron spectroscopy (XPS) characterization, it can be confirmed that the films were stoichiometric WO 3 with a thickness of about 4 nm (as measured by an ellipsometer). The I-V characteristics and dynamic response with respect to H2 gas were measured at elevated temperatures from 50 °C to 150 °C and the results indicate that the H2 sensitivity of this device can exceed approximately 1000 % with an average response time of less than 10 seconds. We discuss and explain these observations in terms of current transportation mechanisms using the thermionic emission model and the change in the Schottky barrier height.
Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 23 Dec 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 3 Jun 20135 Jun 2013

Conference

Conference2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/TerritoryHong Kong
CityHong Kong
Period3/06/135/06/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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