A novel drie fabrication process development for SOI-based MEMS devices

J. Li; Q. X. Zhang; A. Q. Liu

doi:10.1109/DTIP.2003.1287043

A novel drie fabrication process development for SOI-based MEMS devices

J. Li, Q. X. Zhang, A. Q. Liu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

This paper reports a novel deep reactive ion etching (RIE) fabrication process for silicon-on-insulator (SOI) based Micro-electromechanical systems (MEMS) devices. The notching effect and stiction problems that widely exist in SOI based micro fabrication process are solved regardless of the feature sizes by introducing space oxide thin film deposition combined with lateral oxide etching. Dry chemical release is also realized by employing the notching effect. Highspeed optical switch is fabricated by using this new process.

Original language	English
Title of host publication	DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003
Editors	Bernard Courtois, Jean Michel Karam, Jan Korvink, Karen Markus, Keren Bergman, Bernd Michel
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	234-238
Number of pages	5
ISBN (Electronic)	078037066X, 9780780370661
DOIs	https://doi.org/10.1109/DTIP.2003.1287043
Publication status	Published - May 2003
Externally published	Yes
Event	5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003, DTIP 2003 - Cannes, France Duration: 5 May 2003 → 7 May 2003

Publication series

Name	DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003

Conference

Conference	5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003, DTIP 2003
Country/Territory	France
City	Cannes
Period	5/05/03 → 7/05/03

Keywords

Chemicals
Etching
Microelectromechanical devices
Microelectronics
Optical device fabrication
Optical switches
Packaging
Radio frequency
Silicon
Sputtering

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/DTIP.2003.1287043

Cite this

Li, J., Zhang, Q. X., & Liu, A. Q. (2003). A novel drie fabrication process development for SOI-based MEMS devices. In B. Courtois, J. M. Karam, J. Korvink, K. Markus, K. Bergman, & B. Michel (Eds.), DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003 (pp. 234-238). Article 1287043 (DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DTIP.2003.1287043

Li, J. ; Zhang, Q. X. ; Liu, A. Q. / A novel drie fabrication process development for SOI-based MEMS devices. DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003. editor / Bernard Courtois ; Jean Michel Karam ; Jan Korvink ; Karen Markus ; Keren Bergman ; Bernd Michel. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 234-238 (DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003).

@inproceedings{4c0912411b354cbb822a0496a5598c5d,

title = "A novel drie fabrication process development for SOI-based MEMS devices",

abstract = "This paper reports a novel deep reactive ion etching (RIE) fabrication process for silicon-on-insulator (SOI) based Micro-electromechanical systems (MEMS) devices. The notching effect and stiction problems that widely exist in SOI based micro fabrication process are solved regardless of the feature sizes by introducing space oxide thin film deposition combined with lateral oxide etching. Dry chemical release is also realized by employing the notching effect. Highspeed optical switch is fabricated by using this new process.",

keywords = "Chemicals, Etching, Microelectromechanical devices, Microelectronics, Optical device fabrication, Optical switches, Packaging, Radio frequency, Silicon, Sputtering",

author = "J. Li and Zhang, {Q. X.} and Liu, {A. Q.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003, DTIP 2003 ; Conference date: 05-05-2003 Through 07-05-2003",

year = "2003",

month = may,

doi = "10.1109/DTIP.2003.1287043",

language = "English",

series = "DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "234--238",

editor = "Bernard Courtois and Karam, {Jean Michel} and Jan Korvink and Karen Markus and Keren Bergman and Bernd Michel",

booktitle = "DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003",

}

Li, J, Zhang, QX & Liu, AQ 2003, A novel drie fabrication process development for SOI-based MEMS devices. in B Courtois, JM Karam, J Korvink, K Markus, K Bergman & B Michel (eds), DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003., 1287043, DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003, Institute of Electrical and Electronics Engineers Inc., pp. 234-238, 5th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003, DTIP 2003, Cannes, France, 5/05/03. https://doi.org/10.1109/DTIP.2003.1287043

A novel drie fabrication process development for SOI-based MEMS devices. / Li, J.; Zhang, Q. X.; Liu, A. Q.
DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003. ed. / Bernard Courtois; Jean Michel Karam; Jan Korvink; Karen Markus; Keren Bergman; Bernd Michel. Institute of Electrical and Electronics Engineers Inc., 2003. p. 234-238 1287043 (DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - This paper reports a novel deep reactive ion etching (RIE) fabrication process for silicon-on-insulator (SOI) based Micro-electromechanical systems (MEMS) devices. The notching effect and stiction problems that widely exist in SOI based micro fabrication process are solved regardless of the feature sizes by introducing space oxide thin film deposition combined with lateral oxide etching. Dry chemical release is also realized by employing the notching effect. Highspeed optical switch is fabricated by using this new process.

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KW - Optical device fabrication

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KW - Sputtering

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Li J, Zhang QX, Liu AQ. A novel drie fabrication process development for SOI-based MEMS devices. In Courtois B, Karam JM, Korvink J, Markus K, Bergman K, Michel B, editors, DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 234-238. 1287043. (DTIP 2003 - Design, Test, Integration and Packaging of MEMS/MOEMS 2003). doi: 10.1109/DTIP.2003.1287043

A novel drie fabrication process development for SOI-based MEMS devices

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

More information

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