A new method for measuring the residual stresses in multi-layered thin film systems

Mei Liu, Haihui Ruan, Liang Chi Zhang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

To meet different electrical or optical functionalities, thin films are often of multiple layers processed at high temperatures. Substantial residual stresses can therefore develop in such thin film systems due to the disparate thermal properties of the individual material layers. High stresses can lead to mechanical failure of the systems and thus understanding the residual stresses in thin film systems is important. This paper presents a systematic way to characterize the residual stresses in epitaxial, polycrystalline and amorphous layers by using X-ray diffraction (XRD) techniques. The single-point XRD pattern renders the stresses of crystalline layers and the scanning XRD gives the curvature of the whole film. Based on the newly-developed analytical model, the residual stresses of each layer can all be determined.
Original languageEnglish
Title of host publicationManufacturing Engineering and Automation II
Pages884-890
Number of pages7
DOIs
Publication statusPublished - 19 Dec 2012
Externally publishedYes
Event2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012 - Guangzhou, China
Duration: 16 Nov 201218 Nov 2012

Publication series

NameAdvanced Materials Research
Volume591-593
ISSN (Print)1022-6680

Conference

Conference2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012
CountryChina
CityGuangzhou
Period16/11/1218/11/12

Keywords

  • Multilayer
  • Residual stress
  • Thin films
  • X-ray diffraction

ASJC Scopus subject areas

  • Engineering(all)

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