A metallic molybdenum suboxide buffer layer for organic electronic devices

M. T. Greiner, M. G. Helander, Z. B. Wang, Wing Man Tang, J. Qiu, Z. H. Lu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

74 Citations (Scopus)

Abstract

Molybdenum trioxide (MoO3) is commonly used as a buffer layer in organic electronic devices to improve hole-injection. However, stoichiometric MoO3is an insulator, and adds a series resistance. Here it is shown that a MoO3buffer layer can be reduced to form a metallic oxide buffer that exhibits more favorable energy-level alignment with N, N′-diphenyl-N, N′-bis-(1-naphthyl)-1-1′-biphenyl-4, 4′-diamine (α-NPD) than does MoO3. This buffer layer thus provides the conductivity of a metal with the favorable energy alignment of an oxide. Photoemission shows the reduced oxide contains Mo4+ and Mo5+, with a metallic valence band structure similar to MoO2.
Original languageEnglish
Article number213302
JournalApplied Physics Letters
Volume96
Issue number21
DOIs
Publication statusPublished - 24 May 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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