A magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensors

Z. Q. Lei, G. J. Li, P. T. Lai, Philip W.T. Pong, William F. Egelhoff

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

A magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate the hysteresis and the linear field response of MTJ sensors can be measured. The preliminary measurement results on MTJ sensors are presented to illustrate the characterization capabilities of this setup.

Original languageEnglish
Title of host publication2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China
Duration: 15 Dec 201017 Dec 2010

Publication series

Name2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Conference

Conference2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/TerritoryChina
CityHong Kong
Period15/12/1017/12/10

Keywords

  • 1/f noise
  • Mangetic tunnel junction (MTJ)
  • Measurement setup
  • Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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