A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering

Lie Yi Sheng; Zhenan Tang; Jian Wu; Philip Ching Ho Chan; Johnny K.O. Sin

doi:10.1016/S0925-4005(98)00092-6

A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering

Lie Yi Sheng
, Zhenan Tang
, Jian Wu
, Philip Ching Ho Chan
, Johnny K.O. Sin

Research output: Journal article publication › Journal article › Academic research › peer-review

72 Citations (Scopus)

Abstract

This paper describes a CMOS compatible integrated gas sensor. The device was designed so that the front-end fabrication is fully compatible with the standard CMOS process. The non-CMOS compatible fabrication steps were carried out as post-processing steps. This included the silicon anisotropic etch to create the thermally isolated micro-hotplate (MHP) and the deposition of gas-sensitive thin films using maskless r.f. SnO2sputtering. The sensors exhibited high sensitivities to gases, such as ethanol and hydrogen.

Original language	English
Pages (from-to)	81-87
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	49
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-4005(98)00092-6
Publication status	Published - 25 Jun 1998
Externally published	Yes

Keywords

Integrated gas sensor
Lower power
Maskless tin oxide sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1016/S0925-4005(98)00092-6

Cite this

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title = "A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering",

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AU - Tang, Zhenan

AU - Wu, Jian

AU - Chan, Philip Ching Ho

AU - Sin, Johnny K.O.

PY - 1998/6/25

Y1 - 1998/6/25

N2 - This paper describes a CMOS compatible integrated gas sensor. The device was designed so that the front-end fabrication is fully compatible with the standard CMOS process. The non-CMOS compatible fabrication steps were carried out as post-processing steps. This included the silicon anisotropic etch to create the thermally isolated micro-hotplate (MHP) and the deposition of gas-sensitive thin films using maskless r.f. SnO2sputtering. The sensors exhibited high sensitivities to gases, such as ethanol and hydrogen.

AB - This paper describes a CMOS compatible integrated gas sensor. The device was designed so that the front-end fabrication is fully compatible with the standard CMOS process. The non-CMOS compatible fabrication steps were carried out as post-processing steps. This included the silicon anisotropic etch to create the thermally isolated micro-hotplate (MHP) and the deposition of gas-sensitive thin films using maskless r.f. SnO2sputtering. The sensors exhibited high sensitivities to gases, such as ethanol and hydrogen.

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KW - Lower power

KW - Maskless tin oxide sputtering

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DO - 10.1016/S0925-4005(98)00092-6

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ER -

A low-power CMOS compatible integrated gas sensor using maskless tin oxide sputtering

Abstract

Keywords

ASJC Scopus subject areas

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