A low-loss single-pole-double-throw (SPDT) switch circuit

M. Tang, A. Q. Liu, A. Agarwal

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 μs and a switching-off time of 36 μs. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm × 1.3 mm.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
PublisherIEEE Computer Society
Pages679-682
Number of pages4
ISBN (Print)1424408423, 9781424408429
DOIs
Publication statusPublished - Jun 2007
Externally publishedYes
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 10 Jun 200714 Jun 2007

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
Country/TerritoryFrance
CityLyon
Period10/06/0714/06/07

Keywords

  • Low loss
  • RF MEMS
  • Silicon-on-glass
  • SPDT

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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