一种应力记忆高分子材料及智能压力装置

Translated title of the contribution: A kind of stress memory high molecular material and intelligent pressure device

Jinlian Hu (Inventor), KUMAR Bipin (Dr.) (Inventor), Jianping Han (Inventor), Yong Zhu (Inventor), You Wu (Inventor)

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Abstract

本发明公开了一种应力记忆高分子材料,具有不同的相筹及两个以上转变温度,其制备过程包括预处理(移除塑性应变)和应力记忆编程,所述应力记忆编程包括以下步骤:i.加热所述应力记忆高分子材料至T;ii.拉伸所述应力记忆高分子材料至ε;iii.在ε应变下保持一段时间;iv.在ε应变下冷却至T。本发明还公开了一种使用该应力记忆高分子材料的智能压力装置。与现有技术相比较,由于本发明提供的应力记忆高分子材料在ε的应变下进行了去除塑性应变的预处理及在小于ε的ε应变下进行了应力记忆编程,在ε<ε的应变条件下,应力记忆高分子材料比其他用于压力致动器的形状记忆高分子材料将有更长的使用寿命。
Translated title of the contributionA kind of stress memory high molecular material and intelligent pressure device
Original languageChinese (Simplified)
Patent numberZL201510037396.1
IPC A61F13/08
Filing date23/01/15
Publication statusPublished - 1 Oct 2019

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