A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

Huajing Fang, Qiang Li, Wenhui He, Jing Li, Qingtang Xue, Chao Xu, Lijing Zhang, Tianling Ren, Guifang Dong, H. L.W. Chan, Jiyan Dai, Qingfeng Yan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

31 Citations (Scopus)


We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3(PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 103. More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.
Original languageEnglish
Pages (from-to)17306-17311
Number of pages6
Issue number41
Publication statusPublished - 7 Nov 2015

ASJC Scopus subject areas

  • Materials Science(all)

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