A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films

Alireza Moridi, Haihui Ruan, L. C. Zhang, Mei Liu

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

5 Citations (Scopus)

Abstract

During the cooling process from deposition temperature to room temperature, stresses develop in thin silicon layer deposited on sapphire due to thermal and lattice mismatch. This paper used the finite element method to analyse the thermal mismatch effect on the stress variation in the silicon film thickness of 300nm. It was shown that the interfacial shear stresses are apparent at the boundary and negligible at the centre. Hence the boundary effect must be properly treated in the finite element modelling; otherwise results may not be reliable. In addition, the intrinsic stresses induced by the lattice mismatch and dislocations are also modelled for various film thicknesses. A superposition of stresses due to thermal, lattice mismatch and dislocations should render the total residual stress in the silicon on sapphire (SOS) systems.
Original languageEnglish
Title of host publicationAdvances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference
Pages57-64
Number of pages8
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011 - Milan, Italy
Duration: 4 Jul 20118 Jul 2011

Conference

Conference7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011
Country/TerritoryItaly
CityMilan
Period4/07/118/07/11

Keywords

  • FEA
  • Residual stress
  • Silicon on sapphire
  • Thermal and lattice mismatch

ASJC Scopus subject areas

  • Mechanics of Materials
  • Materials Science(all)

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