A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films

Alireza Moridi; Haihui Ruan; L. C. Zhang; Mei Liu

A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films

Alireza Moridi, Haihui Ruan, L. C. Zhang, Mei Liu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

5 Citations (Scopus)

Abstract

During the cooling process from deposition temperature to room temperature, stresses develop in thin silicon layer deposited on sapphire due to thermal and lattice mismatch. This paper used the finite element method to analyse the thermal mismatch effect on the stress variation in the silicon film thickness of 300nm. It was shown that the interfacial shear stresses are apparent at the boundary and negligible at the centre. Hence the boundary effect must be properly treated in the finite element modelling; otherwise results may not be reliable. In addition, the intrinsic stresses induced by the lattice mismatch and dislocations are also modelled for various film thicknesses. A superposition of stresses due to thermal, lattice mismatch and dislocations should render the total residual stress in the silicon on sapphire (SOS) systems.

Original language	English
Title of host publication	Advances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference
Pages	57-64
Number of pages	8
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011 - Milan, Italy Duration: 4 Jul 2011 → 8 Jul 2011

Conference

Conference	7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011
Country/Territory	Italy
City	Milan
Period	4/07/11 → 8/07/11

Keywords

FEA
Residual stress
Silicon on sapphire
Thermal and lattice mismatch

ASJC Scopus subject areas

Mechanics of Materials
Materials Science(all)

Cite this

@inproceedings{c930f11a49bd479997f3857a70af292a,

title = "A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films",

abstract = "During the cooling process from deposition temperature to room temperature, stresses develop in thin silicon layer deposited on sapphire due to thermal and lattice mismatch. This paper used the finite element method to analyse the thermal mismatch effect on the stress variation in the silicon film thickness of 300nm. It was shown that the interfacial shear stresses are apparent at the boundary and negligible at the centre. Hence the boundary effect must be properly treated in the finite element modelling; otherwise results may not be reliable. In addition, the intrinsic stresses induced by the lattice mismatch and dislocations are also modelled for various film thicknesses. A superposition of stresses due to thermal, lattice mismatch and dislocations should render the total residual stress in the silicon on sapphire (SOS) systems.",

keywords = "FEA, Residual stress, Silicon on sapphire, Thermal and lattice mismatch",

author = "Alireza Moridi and Haihui Ruan and Zhang, {L. C.} and Mei Liu",

year = "2011",

month = dec,

day = "1",

language = "English",

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pages = "57--64",

booktitle = "Advances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference",

note = "7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011 ; Conference date: 04-07-2011 Through 08-07-2011",

}

Moridi, A, Ruan, H, Zhang, LC & Liu, M 2011, A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films. in Advances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference. pp. 57-64, 7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011, Milan, Italy, 4/07/11.

A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films. / Moridi, Alireza; Ruan, Haihui; Zhang, L. C. et al.

Advances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference. 2011. p. 57-64.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films

AU - Moridi, Alireza

AU - Ruan, Haihui

AU - Zhang, L. C.

AU - Liu, Mei

PY - 2011/12/1

Y1 - 2011/12/1

N2 - During the cooling process from deposition temperature to room temperature, stresses develop in thin silicon layer deposited on sapphire due to thermal and lattice mismatch. This paper used the finite element method to analyse the thermal mismatch effect on the stress variation in the silicon film thickness of 300nm. It was shown that the interfacial shear stresses are apparent at the boundary and negligible at the centre. Hence the boundary effect must be properly treated in the finite element modelling; otherwise results may not be reliable. In addition, the intrinsic stresses induced by the lattice mismatch and dislocations are also modelled for various film thicknesses. A superposition of stresses due to thermal, lattice mismatch and dislocations should render the total residual stress in the silicon on sapphire (SOS) systems.

AB - During the cooling process from deposition temperature to room temperature, stresses develop in thin silicon layer deposited on sapphire due to thermal and lattice mismatch. This paper used the finite element method to analyse the thermal mismatch effect on the stress variation in the silicon film thickness of 300nm. It was shown that the interfacial shear stresses are apparent at the boundary and negligible at the centre. Hence the boundary effect must be properly treated in the finite element modelling; otherwise results may not be reliable. In addition, the intrinsic stresses induced by the lattice mismatch and dislocations are also modelled for various film thicknesses. A superposition of stresses due to thermal, lattice mismatch and dislocations should render the total residual stress in the silicon on sapphire (SOS) systems.

KW - FEA

KW - Residual stress

KW - Silicon on sapphire

KW - Thermal and lattice mismatch

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SN - 9780986650444

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EP - 64

BT - Advances and Trends in Engineering Materials and their Applications - Proceedings of AES-ATEMA'2011 7th International Conference

T2 - 7th International Conference on Advances and Trends in Engineering Materials and their Applications, AES-ATEMA'2011

Y2 - 4 July 2011 through 8 July 2011

ER -

A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films

Abstract

Conference

Keywords

ASJC Scopus subject areas

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Cite this