A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots

Xiao Zhang, Zhuangchai Lai, Zhengdong Liu, Chaoliang Tan, Ying Huang, Bing Li, Meiting Zhao, Linghai Xie, Wei Huang, Hua Zhang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

163 Citations (Scopus)

Abstract

Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.

Original languageEnglish
Pages (from-to)5425-5428
Number of pages4
JournalAngewandte Chemie - International Edition
Volume54
Issue number18
DOIs
Publication statusPublished - 27 Apr 2015
Externally publishedYes

Keywords

  • memory devices
  • nanodots
  • quantum dots
  • transition metal dichalkogenides
  • two-dimensional materials

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)

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