TY - GEN
T1 - A compact DC - 20 GHz SPDT switch circuit using lateral RF MEMS switches
AU - Tang, Min
AU - Liu, Ai Qun
AU - Agarwal, Ajay
PY - 2005/12
Y1 - 2005/12
N2 - A new single-pole-double-throw (SPDT) switch circuit using high-aspect-ratio lateral RF microelectromechanics system (MEMS) switches has been designed to operate from DC to 20 GHz. By using lateral switches and coplanar waveguide configuration, compactness and low-loss can be obtained. The circuit provides greater than 22 dB isolation and less than 0.9 dB insertion loss up to 20 GHz. A low-cost high-yield silicon-on-glass (SOG) fabrication process has been developed to fabricate this SPDT switch circuit. The size of the whole circuit is only 1.64 mm × 1.3 mm in area.
AB - A new single-pole-double-throw (SPDT) switch circuit using high-aspect-ratio lateral RF microelectromechanics system (MEMS) switches has been designed to operate from DC to 20 GHz. By using lateral switches and coplanar waveguide configuration, compactness and low-loss can be obtained. The circuit provides greater than 22 dB isolation and less than 0.9 dB insertion loss up to 20 GHz. A low-cost high-yield silicon-on-glass (SOG) fabrication process has been developed to fabricate this SPDT switch circuit. The size of the whole circuit is only 1.64 mm × 1.3 mm in area.
UR - http://www.scopus.com/inward/record.url?scp=33847195380&partnerID=8YFLogxK
U2 - 10.1109/APMC.2005.1606530
DO - 10.1109/APMC.2005.1606530
M3 - Conference article published in proceeding or book
AN - SCOPUS:33847195380
SN - 078039433X
SN - 9780780394339
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
BT - APMC 2005
T2 - APMC 2005: Asia-Pacific Microwave Conference 2005
Y2 - 4 December 2005 through 7 December 2005
ER -