A capped trimming hard-mask patterning technique for integration of nano-devices and conventional integrated circuits

Xusheng Wu, Philip Ching Ho Chan, Shengdong Zhang, Mansun Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Capped trimming hard-mask (CTHM) patterning technique has been developed based on standard materials and processing equipments. By using the CTHM technique, sub-50nm feature sized pattern can be realized based on 0.5μ m lithography technology. Imaging layer for capping and hard-mask layer shoul d have different etching selectivity and good contiguity to each other. Good control of trimming etching and hard-mask etching processes enable patterning of features with ultra-small dimension.
Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages781-784
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 19 Dec 200521 Dec 2005

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/TerritoryHong Kong
CityHowloon
Period19/12/0521/12/05

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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