A block-level flash memory management scheme for reducing write activities in PCM-based embedded systems

Duo Liu, Tianzheng Wang, Yi Wang, Zhiwei Qin, Zili Shao

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

33 Citations (Scopus)

Abstract

This paper targets at an embedded system with phase change memory (PCM) and NAND flash memory. Although PCM is a promising main memory alternative and is recently introduced to embedded system designs, its endurance keeps drifting down and greatly limits the lifetime of the whole system. Therefore, this paper presents a block-level flash memory management scheme, WAB-FTL, to effectively manage NAND flash memory while reducing write activities of the PCM-based embedded systems. The basic idea is to preserve each bit in flash mapping table hosted by PCM from being inverted frequently during the process of mapping table update. To achieve this, a new merge strategy is adopted in WAB-FTL to delay the mapping table update, and a tiny mapping buffer is used for caching frequently updated mapping records. Experimental results based on Android traces show that WAB-FTL can effectively reduce write activities when compared with the baseline scheme.
Original languageEnglish
Title of host publicationProceedings - Design, Automation and Test in Europe Conference and Exhibition, DATE 2012
Pages1447-1450
Number of pages4
Publication statusPublished - 24 May 2012
Event15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012 - Dresden, Germany
Duration: 12 Mar 201216 Mar 2012

Conference

Conference15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012
Country/TerritoryGermany
CityDresden
Period12/03/1216/03/12

Keywords

  • endurance
  • flash translation layer
  • NAND flash memory
  • Phase change memory
  • write activity

ASJC Scopus subject areas

  • Engineering(all)

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