@article{f52e52f8777440bdadb021dc4668654e,
title = "A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications",
abstract = "As a promising building block of the emerging neuromorphic computing hardware, memristive structures with multi-functionalities are highly desired to implement diversified computing applications in a single device. However, the demonstration of such multi-functional structures remains limited. In this work, an Ag/GeS/Pt-based bifunctional memory structure with both long-term and short-term memristive behaviors is reported, enabling multiple neuromorphic computing applications in a single device. It is found that the unexpected short-term switching in Ag/GeS/Pt can not only be used to simulate learning/relearning and forgetting behavior but can also be implemented for reservoir computing. While for long-term switching memristive behavior, its application is demonstrated as the traditional memory. The work reveals a novel coexistence of the two types of resistive switching, shedding light on various neuromorphic computing applications such as reservoir computing and traditional memory realized in a single memristive device.",
keywords = "GeS, memristor, paired-pulse facilitation, reservoir computing, resistive switching",
author = "Nikolay Lyapunov and Xiaodong Zheng and Ke Yang and Haomin Liu and Kai Zhou and Songhua Cai and Ho, {Tsz Lung} and Suen, {Chun Hung} and Ming Yang and Jiong Zhao and Xiaoyuan Zhou and Jiyan Dai",
note = "Funding Information: The authors thank the support from Guangdong‐Hong Kong‐Macao Joint Laboratory for Photonic‐Thermal‐Electrical Energy Materials and Devices (GDSTC No. 2019B121205001), and The Hong Kong Polytechnic University (Grant Nos. 1‐ZVSQ, UAEZ). X.Z. acknowledges financial support from the National Natural Science Foundation of China (NSFC) (Grant No. 11674040, 11904039) and the Fundamental Research Funds for the Central Universities (Grant no. 2018CDQYWL0048, 106112017CDJQJ308821 and 2018CDPTCG0001/26). N.L. also thanks the financial support from the Hong Kong Ph.D. fellowship scheme. Funding Information: The authors thank the support from Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC No. 2019B121205001), and The Hong Kong Polytechnic University (Grant Nos. 1-ZVSQ, UAEZ). X.Z. acknowledges financial support from the National Natural Science Foundation of China (NSFC) (Grant No. 11674040, 11904039) and the Fundamental Research Funds for the Central Universities (Grant no. 2018CDQYWL0048, 106112017CDJQJ308821 and 2018CDPTCG0001/26). N.L. also thanks the financial support from the Hong Kong Ph.D. fellowship scheme. Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",
year = "2022",
month = jul,
doi = "10.1002/aelm.202101235",
language = "English",
volume = "8",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "7",
}