A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

Jiajia Chen, Jiaqiang Yang, Shiyou Yang, Siu Lau Ho, Zhuoxiang Ren

Research output: Journal article publicationJournal articleAcademic researchpeer-review


To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.
Original languageEnglish
Article number7001304
JournalIEEE Transactions on Magnetics
Issue number3
Publication statusPublished - 1 Mar 2018


  • Ambipolar diffusion equation (ADE)
  • insulated-gate bipolar transistor (IGBT)
  • transient behavior

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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