Abstract
A monolithically integrated, high speed optical front-end for optical sensing application in standard 0.35-μm CMOS technology is reported. The proposed receiver consists of an integrated photodiode, a transimpedance amplifier, a mixer, an IF amplifier and an output buffer. By treating the n-well in standard CMOS technology as a screening terminal to block the slow photo-generated bulk carriers and interdigitizing shallow p-junctions as the active region, the integrated photodiode operates up to several gigahertz with no process modification. With multi-inductive-series peaking technique, the improved regulated cascade (RGC) transimpedance amplifier achieves an experimentally measured -3 dB bandwidth of more than 6 GHz and a transimpedance gain of 51 dBΩ, which is the fastest reported TIA in CMOS 0.35-μm technology. The 5 GHz broadband mixer produces a conversion gain of 13 dB which greatly minimizes the noise contribution from the IF amplification stage. The optical front-end of the active pixel demonstrates a -3 dB bandwidth of 4.9 GHz while consuming a current of 40 mA from 3.3 V power supply. This work presents the highest bandwidth for fully integrated CMOS optical receivers reported to date.
| Original language | English |
|---|---|
| Title of host publication | Silicon Photonics II |
| Volume | 6477 |
| DOIs | |
| Publication status | Published - 24 May 2007 |
| Externally published | Yes |
| Event | Silicon Photonics II - San Jose, CA, United States Duration: 22 Jan 2007 → 24 Jan 2007 |
Conference
| Conference | Silicon Photonics II |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 22/01/07 → 24/01/07 |
Keywords
- CMOS
- Front-end
- Optical
- TIA
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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