With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.
|Number of pages||2|
|Journal||OSA Trends in Optics and Photonics Series|
|Publication status||Published - Jun 2003|
|Event||Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States|
Duration: 1 Jun 2003 → 6 Jun 2003
ASJC Scopus subject areas