Abstract
With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.
Original language | English |
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Pages (from-to) | 668-669 |
Number of pages | 2 |
Journal | OSA Trends in Optics and Photonics Series |
Volume | 88 |
Publication status | Published - Jun 2003 |
Externally published | Yes |
Event | Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: 1 Jun 2003 → 6 Jun 2003 |
ASJC Scopus subject areas
- Engineering(all)