2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength

Ching Fuh Lin; Chih Hung Tsai; Chia Wei Tsai; D. P. Tsai; Yi Shin Su

2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength

Ching Fuh Lin, Chih Hung Tsai, Chia Wei Tsai, D. P. Tsai, Yi Shin Su

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.

Original language	English
Pages (from-to)	668-669
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	88
Publication status	Published - Jun 2003
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: 1 Jun 2003 → 6 Jun 2003

ASJC Scopus subject areas

Engineering(all)

Cite this

@article{2b40c1c6e32e4c0dab70ec7199511d57,

title = "2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength",

abstract = "With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.",

author = "Lin, {Ching Fuh} and Tsai, {Chih Hung} and Tsai, {Chia Wei} and Tsai, {D. P.} and Su, {Yi Shin}",

year = "2003",

month = jun,

language = "English",

volume = "88",

pages = "668--669",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics (CLEO); Postconference Digest ; Conference date: 01-06-2003 Through 06-06-2003",

}

TY - JOUR

T1 - 2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength

AU - Lin, Ching Fuh

AU - Tsai, Chih Hung

AU - Tsai, Chia Wei

AU - Tsai, D. P.

AU - Su, Yi Shin

PY - 2003/6

Y1 - 2003/6

N2 - With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.

AB - With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7° and the output power could exceed 2W.

UR - http://www.scopus.com/inward/record.url?scp=8744267081&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:8744267081

VL - 88

SP - 668

EP - 669

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

SN - 1094-5695

T2 - Conference on Lasers and Electro-Optics (CLEO); Postconference Digest

Y2 - 1 June 2003 through 6 June 2003

ER -

2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength

Abstract

ASJC Scopus subject areas

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