Abstract
The use of optical proximity correction (OPC) in the 248nm lithography of 2D photonic crystal waveguide, is discussed. Specially designed exposure conditions were used to characterize the effect of OPE in detail under different lithographic conditions. Based on data obtained through systematic design, multifactorial analysis of experiment data was carried out to obtain a rule-based model of OPC. The results yielded repeatable process of obtaining high-resolution arrays of dense nano-pillars at designed dimensions.
| Original language | English |
|---|---|
| Pages (from-to) | 87-88 |
| Number of pages | 2 |
| Journal | LEOS Summer Topical Meeting |
| Publication status | Published - Jul 2004 |
| Externally published | Yes |
| Event | 2004 Digest of the LEOS Summer Topical Meetings - San Diego, CA, United States Duration: 28 Jul 2004 → 30 Jul 2004 |
Keywords
- Deep UV lithography
- Mask bias
- Optical proximity correction
- Optical proximity errors
- Pillar type nano-photonic crystal fabrication
- Resolution enhancement techniques
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering