1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

Wei Jin, Philip Ching Ho Chan, Chaohe Hai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

5 Citations (Scopus)


1.5-V 1.8-GHz low noise amplifier (LNA) circuits are fabricated using 0.6 μm partially-depleted silicon on insulator technology. The comparison between circuits with floating-body (FB) and body-contact (BC) devices showed that the former has better performance for RF applications.
Original languageEnglish
Title of host publicationIEEE International SOI Conference
Number of pages2
Publication statusPublished - 1 Dec 1999
Externally publishedYes
EventThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, United States
Duration: 4 Oct 19997 Oct 1999


ConferenceThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
Country/TerritoryUnited States
CityRohnert Park, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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