1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

Wei Jin; Philip Ching Ho Chan; Chaohe Hai

1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

Wei Jin, Philip Ching Ho Chan, Chaohe Hai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

5 Citations (Scopus)

Abstract

1.5-V 1.8-GHz low noise amplifier (LNA) circuits are fabricated using 0.6 μm partially-depleted silicon on insulator technology. The comparison between circuits with floating-body (FB) and body-contact (BC) devices showed that the former has better performance for RF applications.

Original language	English
Title of host publication	IEEE International SOI Conference
Publisher	IEEE
Pages	16-17
Number of pages	2
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, United States Duration: 4 Oct 1999 → 7 Oct 1999

Conference

Conference	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
Country/Territory	United States
City	Rohnert Park, CA
Period	4/10/99 → 7/10/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@inproceedings{a4ec37a5c1724c688fba451b462c0f37,

title = "1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers",

abstract = "1.5-V 1.8-GHz low noise amplifier (LNA) circuits are fabricated using 0.6 μm partially-depleted silicon on insulator technology. The comparison between circuits with floating-body (FB) and body-contact (BC) devices showed that the former has better performance for RF applications.",

author = "Wei Jin and Chan, {Philip Ching Ho} and Chaohe Hai",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "16--17",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

address = "United States",

note = "The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference ; Conference date: 04-10-1999 Through 07-10-1999",

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TY - GEN

T1 - 1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

AU - Jin, Wei

AU - Chan, Philip Ching Ho

AU - Hai, Chaohe

PY - 1999/12/1

Y1 - 1999/12/1

N2 - 1.5-V 1.8-GHz low noise amplifier (LNA) circuits are fabricated using 0.6 μm partially-depleted silicon on insulator technology. The comparison between circuits with floating-body (FB) and body-contact (BC) devices showed that the former has better performance for RF applications.

AB - 1.5-V 1.8-GHz low noise amplifier (LNA) circuits are fabricated using 0.6 μm partially-depleted silicon on insulator technology. The comparison between circuits with floating-body (FB) and body-contact (BC) devices showed that the former has better performance for RF applications.

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M3 - Conference article published in proceeding or book

SP - 16

EP - 17

BT - IEEE International SOI Conference

PB - IEEE

T2 - The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference

Y2 - 4 October 1999 through 7 October 1999

ER -

1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

Abstract

Conference

ASJC Scopus subject areas

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