0.18m CMOS dual-band low-noise amplifier for ZigBee development

K. Xuan, K. F. Tsang, Wah Ching Lee, S. C. Lee

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

A fully integrated dual-band (868/915MHz and 2.4GHz) low-noise amplifier is designed using 0.18m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15dB and the resulting noise figures are better than 2.0dB. The input and the output reflections are measured to be better than -10dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2V supply voltage with 10mA current dissipation.
Original languageEnglish
Pages (from-to)85-86
Number of pages2
JournalElectronics Letters
Volume46
Issue number1
DOIs
Publication statusPublished - 11 Feb 2010

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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