0.18m CMOS dual-band low-noise amplifier for ZigBee development

K. Xuan; K. F. Tsang; Wah Ching Lee; S. C. Lee

doi:10.1049/el.2010.2448

0.18m CMOS dual-band low-noise amplifier for ZigBee development

K. Xuan, K. F. Tsang, Wah Ching Lee, S. C. Lee

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

12 Citations (Scopus)

Abstract

A fully integrated dual-band (868/915MHz and 2.4GHz) low-noise amplifier is designed using 0.18m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15dB and the resulting noise figures are better than 2.0dB. The input and the output reflections are measured to be better than -10dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2V supply voltage with 10mA current dissipation.

Original language	English
Pages (from-to)	85-86
Number of pages	2
Journal	Electronics Letters
Volume	46
Issue number	1
DOIs	https://doi.org/10.1049/el.2010.2448
Publication status	Published - 11 Feb 2010

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.2448

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abstract = "A fully integrated dual-band (868/915MHz and 2.4GHz) low-noise amplifier is designed using 0.18m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15dB and the resulting noise figures are better than 2.0dB. The input and the output reflections are measured to be better than -10dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2V supply voltage with 10mA current dissipation.",

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0.18m CMOS dual-band low-noise amplifier for ZigBee development

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