α-Sn thin films have been grown on GaAs (001) single crystal substrates by molecular beam epitaxy (MBE). The α-Sn growth process has been characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to analyze the interface structures. The measurement results indicate that our metastable α-Sn films have both higher temperature stability which increases by 30°C (from 70 to 100"°C) and thickness stability which increases by 200 nm (from 500 to 700 nm) in comparison with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum well structure has been suggested.
|Journal||Science in China, Series A: Mathematics, Physics, Astronomy|
|Publication status||Published - 1 Dec 1998|
- α-sn thin film
- Quantum size effect
- Quantum well
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