α-Sn thin film grown on GaAs substrate by MBE and investigation of its multiquantum well structure

Y. I. Xinjian; Jianhua Hao; Xinyu Zhang; G. K. Wong

α-Sn thin film grown on GaAs substrate by MBE and investigation of its multiquantum well structure

Y. I. Xinjian, Jianhua Hao, Xinyu Zhang, G. K. Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

α-Sn thin films have been grown on GaAs (001) single crystal substrates by molecular beam epitaxy (MBE). The α-Sn growth process has been characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to analyze the interface structures. The measurement results indicate that our metastable α-Sn films have both higher temperature stability which increases by 30°C (from 70 to 100"°C) and thickness stability which increases by 200 nm (from 500 to 700 nm) in comparison with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum well structure has been suggested.

Original language	English
Journal	Science in China, Series A: Mathematics, Physics, Astronomy
Volume	41
Issue number	4
Publication status	Published - 1 Dec 1998
Externally published	Yes

Keywords

α-sn thin film
Heteroepitaxy
MBE
Quantum size effect
Quantum well

ASJC Scopus subject areas

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Cite this

@article{73f4bbf590a84ccb8d9eddf091a5f541,

title = "α-Sn thin film grown on GaAs substrate by MBE and investigation of its multiquantum well structure",

abstract = "α-Sn thin films have been grown on GaAs (001) single crystal substrates by molecular beam epitaxy (MBE). The α-Sn growth process has been characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to analyze the interface structures. The measurement results indicate that our metastable α-Sn films have both higher temperature stability which increases by 30°C (from 70 to 100{"}°C) and thickness stability which increases by 200 nm (from 500 to 700 nm) in comparison with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum well structure has been suggested.",

keywords = "α-sn thin film, Heteroepitaxy, MBE, Quantum size effect, Quantum well",

author = "Xinjian, {Y. I.} and Jianhua Hao and Xinyu Zhang and Wong, {G. K.}",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "41",

journal = "Science in China, Series A: Mathematics, Physics, Astronomy",

issn = "1006-9283",

publisher = "Gordon and Breach Science Publishers",

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TY - JOUR

T1 - α-Sn thin film grown on GaAs substrate by MBE and investigation of its multiquantum well structure

AU - Xinjian, Y. I.

AU - Hao, Jianhua

AU - Zhang, Xinyu

AU - Wong, G. K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - α-Sn thin films have been grown on GaAs (001) single crystal substrates by molecular beam epitaxy (MBE). The α-Sn growth process has been characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to analyze the interface structures. The measurement results indicate that our metastable α-Sn films have both higher temperature stability which increases by 30°C (from 70 to 100"°C) and thickness stability which increases by 200 nm (from 500 to 700 nm) in comparison with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum well structure has been suggested.

AB - α-Sn thin films have been grown on GaAs (001) single crystal substrates by molecular beam epitaxy (MBE). The α-Sn growth process has been characterized in situ by reflection high energy electron diffraction (RHEED), and the transmission electron microscope (TEM) was used to analyze the interface structures. The measurement results indicate that our metastable α-Sn films have both higher temperature stability which increases by 30°C (from 70 to 100"°C) and thickness stability which increases by 200 nm (from 500 to 700 nm) in comparison with previous reports. Other improvements in electrical properties have also been observed. In addition, a new model of multiquantum well structure has been suggested.

KW - α-sn thin film

KW - Heteroepitaxy

KW - MBE

KW - Quantum size effect

KW - Quantum well

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M3 - Journal article

SN - 1006-9283

VL - 41

JO - Science in China, Series A: Mathematics, Physics, Astronomy

JF - Science in China, Series A: Mathematics, Physics, Astronomy

IS - 4

ER -

α-Sn thin film grown on GaAs substrate by MBE and investigation of its multiquantum well structure

Abstract

Keywords

ASJC Scopus subject areas

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