Calculated based on number of publications stored in Pure and citations from Scopus
1993 …2023

Research activity per year

If you made any changes in Pure these will be visible here soon.

Network

Yan Chen

  • Harbin Institute of Technology

External person

R. P.H. Chang

  • Northwestern University

External person

Xiaoyuan Zhou

  • Chongqing University

External person

H. C. Ong

  • Northwestern University
  • University of Technology Sydney

External person

C. L. Choy

  • The Hong Kong Polytechnic University
  • Chinese University of Hong Kong

External person

D. Zhou

  • CAS - Shanghai Institute of Ceramics

External person

H. S. Luo

  • CAS - Shanghai Institute of Ceramics

External person

Min Zeng

  • South China Normal University

External person

J. M. Liu

  • Nanjing University

External person

S. Redkar

  • Chartered Semiconductor Manufacturing Ltd.

External person

D. X. Li

  • CAS - Institute of Metal Research

External person

Zhi Yong Bao

  • The Hong Kong Polytechnic University
  • Hefei University of Technology

External person

Weibao Qiu

  • Shenzhen Institute of Advanced Technology
  • Shenzhen Key Laboratory of Ultrasound Imaging and Therapy

External person

D. Mangelinck

  • Agency for Science, Technology and Research, Singapore

External person

X. Y. Qiu

  • Southwest University

External person

H. Q. Ye

  • CAS - Institute of Metal Research

External person

X. Zhao

  • Hong Kong Baptist University
  • Tongji University

External person

Haosu Luo

  • Chinese Academy of Sciences
  • CAS - Shanghai Institute of Ceramics

External person

Guoyu Wang

  • Chinese Academy of Sciences

External person

Jun Ming Liu

  • Nanjing University
  • South China Normal University

External person

K. L. Pey

  • National University of Singapore

External person

X. B. Lu

  • CAS - Institute of Physics

External person

Xiaodan Tang

  • Chongqing University
  • Chinese Academy of Sciences

External person

Qiang Li

  • Wuhan Institute of Technology
  • Kwai
  • Y-tech
  • New York University
  • South China Agricultural University
  • Guangzhou Medical College
  • Beijing Normal University
  • Nanjing University of Science and Technology
  • LLP
  • Northwestern Polytechnical University Xian
  • DJI Innovation Technology Co., Ltd.
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Shandong University

External person

A. A. Setlur

  • Northwestern University

External person

X. Liu

  • University of Southampton
  • National Taiwan University

External person

S. Ansari

  • Chartered Semiconductor Manufacturing Ltd.

External person

S. K. Lahiri

  • Agency for Science, Technology and Research, Singapore

External person

J. M. Lauerhaas

  • Northwestern University

External person

Dan Zhou

  • Zhejiang Gongshang University
  • Hong Kong University of Science and Technology
  • Central South University
  • Joint International Research Laboratory of Key Technology for Rail Traffic Safety
  • National & Local Joint Engineering Research Center of Safety Technology for Rail Vehicle
  • Guangdong Provincial People's Hospital

External person

Lijie Guo

  • Chongqing University

External person

J. T. Guo

  • CAS - Institute of Metal Research

External person

Yucheng Wu

  • Hefei University of Technology
  • Key Laboratory of Advanced Functional Materials and Devices of Anhui Province
  • Taiyuan University of Technology

External person

Z. P. Xing

  • CAS - Institute of Metal Research

External person

D. Z. Chi

  • 3 Research Link

External person

Huajing Fang

  • Tsinghua University

External person

D. Y. Wang

  • University of New South Wales

External person

J. Wang

  • Zhejiang University

External person

Xingsen Gao

  • South China Normal University

External person

J. Ding

  • National University of Singapore

External person

P. S. Lee

  • National University of Singapore

External person

T. Osipowicz

  • National University of Singapore

External person

S. F. Tee

  • Chartered Semiconductor Manufacturing Ltd.

External person

Kunling Peng

  • Chongqing University
  • Chinese Academy of Sciences

External person

Xu Lu

  • Chongqing University
  • King Abdullah University of Science and Technology

External person

Z. Zhang

  • Tianjin University

External person

C. L. Tay

  • Chartered Semiconductor Manufacturing Ltd.

External person

Z. G. Song

  • Chartered Semiconductor Manufacturing Ltd.

External person

J. X. Zhang

  • Sun Yat-Sen University

External person

Qifa Zhou

  • University of Southern California

External person

Hairong Zheng

  • Shenzhen Institute of Advanced Technology
  • Chinese Academy of Sciences

External person

Qingfeng Yan

  • Tsinghua University

External person

L. T. Li

  • Beijing University of Technology
  • Southwest University

External person

Zhongnan Xi

  • Qingdao University

External person

L. G. Yu

  • Chinese Academy of Sciences

External person

Z. Q. Hu

  • CAS - Institute of Metal Research

External person

Dongsheng Sun

  • Shandong Normal University

External person

Xin Liu

  • Hong Kong Baptist University
  • Nanjing University of Science and Technology
  • Curtin University
  • Guangdong Academy of Sciences
  • National Engineering Research Center of Powder Metallurgy of Titanium and Rare Metals
  • Sun Yat-Sen University
  • Guangdong Medical College
  • Dalian University of Technology

External person

Quan Li

  • Chinese University of Hong Kong

External person

Fengzhao Li

  • Shandong Normal University

External person

Zhang Zhang

  • South China Normal University

External person

E. Er

  • Chartered Semiconductor Manufacturing Ltd.

External person

G. J. Zhang

  • China Building Materials Academy

External person

H. Li

  • University of California at Davis
  • KTH Royal Institute of Technology
  • Shandong University
  • Northwestern Polytechnical University Xian

External person

Z. B. Yan

  • Nanjing University

External person

Xinyi Zhang

  • Monash University
  • Hong Kong University of Science and Technology

External person

Minghui Qin

  • South China Normal University
  • Tianjin University

External person

T. Zhang

  • The University of Hong Kong
  • Southwest University

External person

C. W. Lai

  • Chartered Semiconductor Manufacturing Ltd.

External person

Xubing Lu

  • South China Normal University

External person

A. See

  • Chartered Semiconductor Manufacturing Ltd.

External person

Zhen Fan

  • South China Normal University

External person

Douxing Li

  • Shandong Normal University

External person

Juan Wang

  • Chinese University of Hong Kong

External person

Y. G. Wang

  • Norwegian University of Science and Technology

External person

Guiwen Wang

  • Chongqing University
  • Chinese Academy of Sciences

External person

Huanting Wang

  • Monash University

External person

S. Li

  • Lakehead University

External person

T. C. Lei

  • Harbin Institute of Technology

External person

Guo Tian

  • South China Normal University

External person

R. X. Wang

  • The University of Hong Kong

External person

Jiaqiang Yan

  • Oak Ridge National Laboratory

External person

Yanci Yan

  • Chongqing University

External person

Junfeng Wang

  • Huazhong University of Science and Technology

External person

Chunyan Zheng

  • Qingdao University

External person

Zengxing Lu

  • South China Normal University

External person

Zhibo Yan

  • Linköping University
  • Nanjing University

External person

W. Huang

  • Sun Yat-Sen University
  • CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
  • University of Electronic Science and Technology of China
  • Soochow University
  • Shandong University of Science and Technology

External person

G. D. Zhou

  • Southwest University

External person

P. R. Markworth

  • Northwestern University

External person

T. J. Marks

  • Northwestern University

External person

G. Y. An

  • Harbin Institute of Technology

External person

Dongyuan Zhao

  • Monash University
  • Fudan University

External person

Yan Wang

  • University of Southern California
  • CAS - Nanjing Institute of Geography and Limnology
  • Nanjing EasySensor Environmental Technology Co., Ltd
  • Nanjing Easysensor Environmental Technology Company, Limited

External person

L. Chan

  • Chartered Semiconductor Manufacturing Ltd.
  • The Hong Kong Polytechnic University

External person

Yidong Hou

  • Sichuan University

External person

Liang Li

  • Central South University
  • Peking University
  • Huazhong University of Science and Technology
  • Nanjing University of Posts and Telecommunications
  • NYU Abu Dhabi
  • Shanghai Jiao Tong University
  • Shanghai University of Electric Power
  • Nanjing University of Aeronautics and Astronautics
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China
  • Anhui University

External person

X. Y. Zhou

  • Chinese University of Hong Kong

External person

K. H. Wong

  • Queen Elizabeth Hospital Hong Kong

External person

Qing Ao

  • Shandong University of Technology

External person

X. S. Meng

  • Southwest University

External person

Kai Zhou

  • Zhejiang Sci-Tech University
  • Washington University St. Louis
  • Michigan State University
  • Chongqing University
  • China Aerospace Science and Technology Corporation
  • CAS - Institute of Mechanics
  • Chinese Academy of Sciences

External person

F. Ye

  • Harbin Institute of Technology

External person

C. Zhang

  • The University of Hong Kong
  • Fujian Medical University
  • Aalborg University

External person

R. P H Chang

  • Northwestern University

External person

David Mandrus

  • Oak Ridge National Laboratory
  • University of Tennessee, Knoxville

External person

Fan Zhang

  • Tsinghua University
  • Sun Yat-Sen University
  • Shenzhen University
  • Wuhan University
  • Zhejiang University
  • Griffith University Queensland
  • Macau University of Science and Technology
  • Southeast University, Dhaka
  • Shenzhen Institute of Advanced Technology
  • Beijing Institute of Technology
  • Jishou University
  • Hong Kong University of Science and Technology

External person

Z. R. Guo

  • Chartered Semiconductor Manufacturing Ltd.

External person

H. Cao

  • Northwestern University

External person

Zhongwen Li

  • South China Normal University

External person

Zhiyong Bao

  • Hefei University of Technology

External person

C. S. Ho

  • National University of Singapore

External person

Z. X. Jin

  • CAS - Institute of Metal Research

External person

Yong Wang

  • National University of Defense Technology
  • Guangdong University of Technology
  • Zhejiang University

External person

K. Shung

  • University of Southern California

External person

He Tian

  • East China University of Science and Technology

External person

Guifang Dong

  • Tsinghua University

External person

Minglong Wei

  • Southwest University

External person

Yang Xiao

  • Shenzhen Institute of Advanced Technology
  • Guangdong Academy of Agricultural Sciences
  • The Hong Kong Polytechnic University
  • Chongqing University
  • Hohai University
  • City University of Hong Kong
  • Xidian University

External person

Deyang Chen

  • South China Normal University

External person

J. Miao

  • Beijing Jiaotong University

External person

Junxiang Yao

  • South China Normal University

External person

H. X. Yang

  • CAS - Institute of Physics

External person

W. L. Liu

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

W. B. Qiu

  • Chinese Academy of Sciences

External person

Yanan Li

  • Peking University

External person

Tian Ling Ren

  • Tsinghua University

External person

Forrest H. Kaatz

  • Northwestern University

External person

Carl R. Kannewurf

  • Northwestern University

External person

Jing Li

  • National Geomatics Center of China
  • CAS - Changchun Institute of Applied Chemistry
  • University of Chinese Academy of Sciences
  • Sichuan University
  • Chinese Academy of Sciences
  • Hebei Mental Health Center
  • Shanxi University

External person

S. K. Loh

  • Chartered Semiconductor Manufacturing Ltd.

External person

Huichao Wang

  • Sun Yat-Sen University

External person

C. K. Oh

  • Chartered Semiconductor Manufacturing Ltd.
  • Korea Advanced Institute of Science and Technology

External person

Y. G. Zhao

  • Northwestern University

External person

Jian Wang

  • Peking University
  • Chinese Academy of Sciences

External person

K. Kirk Shung

  • IEEE
  • University of Southern California

External person

Heng Zhan

  • Chongqing University

External person

A. T.S. Wee

  • National University of Singapore
  • Centre for Advanced 2D Materials

External person

X. F. Wang

  • Chinese University of Hong Kong

External person

Shujin Huang

  • North Carolina State University

External person

Peilian Li

  • South China Normal University

External person

Laure Bourgeois

  • Monash University

External person

Yu Wang

  • National Taiwan University
  • Shenzhen University
  • North China Electric Power University, Baoding
  • Chinese Academy of Medical Sciences
  • Nanchang University
  • Nanyang Technological University
  • Guangzhou University

External person

S. Y. Zhang

  • Southwest University

External person

W. Liu

  • Wuhan Center of Environmental Monitoring

External person

Z. T. Song

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Michael P. Chudzik

  • Northwestern University

External person

Xiaoning Jiang

  • North Carolina State University

External person

M. L. Wei

  • Southwest University

External person

C. S. Teh

  • Chartered Semiconductor Manufacturing Ltd.

External person

X. P. Jiang

  • Jingdezhen Ceramic Institute
  • Elliott Mastology Center

External person

J. Peng

  • Wuhan University
  • Hunan University

External person

X. M. Wan

  • CAS - Shanghai Institute of Ceramics

External person

Yanzhao Liu

  • Peking University

External person

Wei Zhang

  • Lund University
  • Civil Aviation University of China
  • City University of Hong Kong
  • Shandong University
  • Beijing University of Technology
  • Chongqing University
  • Sichuan University
  • IAPCM

External person

Qiao Jin

  • Qingdao University

External person

Xiao Song

  • University of Washington
  • Zhejiang University of Technology

External person

J. Y. Wu

  • Northwestern University

External person

Dandan Xie

  • Chongqing University

External person

Tobin J. Marks

  • Northwestern University

External person

Yongjie Liu

  • Huazhong University of Science and Technology
  • Wuhan University

External person

Paul A. Webley

  • Monash University

External person

C. M. Wong

  • The University of Hong Kong

External person

Chao Zhang

  • Hirosaki University
  • CAS - Institute of Chemistry
  • Nanjing University of Aeronautics and Astronautics
  • Rice University
  • Tianjin University of Technology
  • Chinese Academy of Sciences
  • Nankai University

External person

Robert P.H. Chang

  • Northwestern University

External person

Bernd Ploss

  • University of Applied Sciences Jena

External person

Lina Zhao

  • South China Normal University

External person

Haiwen Liu

  • Beijing Normal University

External person

Z. Z. Jin

  • China Building Materials Academy
  • University of Minnesota Twin Cities
  • Tongji University

External person

Yingni Gu

  • Shandong University of Technology

External person

Hongying Peng

  • CAS - Institute of Metal Research

External person

Douglas R. MacFarlane

  • Monash University

External person

P. L. Washington

  • Northwestern University

External person

G. Qian

  • Chartered Semiconductor Manufacturing Ltd.

External person

Q. H. Wang

  • Northwestern University

External person

Fengyuan Zhang

  • South China Normal University

External person

Nianqing Fu

  • Peking University
  • South China University of Technology
  • The Hong Kong Polytechnic University

External person

Dang Yuan Lei

  • The Hong Kong Polytechnic University

External person

Xubing B. Lu

  • South China Normal University

External person

Hua Fan

  • South China Normal University

External person

Jinwei Gao

  • South China Normal University

External person

Zheng Wen

  • Qingdao University

External person

Min Su

  • Shenzhen Institute of Advanced Technology
  • Dalian Maritime University

External person

D. B. Buchholz

  • Northwestern University

External person

Y. B. Qin

  • CAS - Institute of Physics

External person

Jun Liu

  • Zhejiang University
  • Xi'an Jiaotong University
  • CAS - National Astronomical Observatories
  • Max Planck Institute for Radio Astronomy
  • South China University of Technology
  • City University of Hong Kong
  • Ulster University

External person

Aijuan Zhang

  • Chongqing University

External person

Y. T. Tu

  • National Sun Yat-sen University

External person

Lijing Zhang

  • Tsinghua University

External person

Jiang Jiang

  • Shandong University of Technology

External person

Chaojing Lu

  • Qingdao University

External person

J. H. Zhang

  • Wuhan University of Technology

External person

Tianling Ren

  • Tsinghua University

External person

Jinchuan Wu

  • Shantou Institute of Ultrasonic Instruments Co., Ltd.

External person

Sheung Mei Ng

  • Queen Elizabeth Hospital Hong Kong

External person

H. Ji

  • University of Electronic Science and Technology of China

External person

Danny von Nordheim

  • University of Applied Sciences Jena

External person

A. Wang

  • Northwestern University
  • China University of Geosciences, Wuhan
  • University of Leeds

External person

Meng Zhao

  • Changzhou University
  • Guilin University of Electronic Technology
  • Hefei University of Technology

External person

Yongcheng Zhang

  • Qingdao University
  • Huaiyin Institute of Technology

External person

K. K. Shung

  • University of Southern California

External person

E. W. Seelig

  • Northwestern University

External person

Changgan Zeng

  • University of Science and Technology of China

External person

Guofeng Li

  • Shenzhen Institute of Advanced Technology

External person

Xiaoyan Y. Qiu

  • Southwest University

External person

S. Yoshimura

  • Japan Science and Technology Agency

External person

Shuai Dong

  • Southeast University, Nanjing
  • Harbin Institute of Technology

External person

Jun Ge

  • Chinese Academy of Sciences
  • Peking University

External person

A. J. Hong

  • Nanjing University

External person

Xiaozhe Yin

  • South China Normal University

External person

Y. X. Zhou

  • Nanyang Technological University
  • Defence Science and Technology Agency - Singapore
  • Chongqing University

External person

W. B. Wu

  • University of Science and Technology of China

External person

Hong Wu

  • Hainan University
  • Chongqing University
  • Fudan University

External person

J. Q. Li

  • CAS - Institute of Physics

External person

Chao Xu

  • Tianjin University
  • Southern Medical University

External person

Zhizheng Jiang

  • Qingdao University

External person

W. Fan

  • Northwestern University
  • Shanghai Jiao Tong University

External person

Di Wu

  • Zhengzhou University
  • Nanjing Medical University

External person

Jinxing Zhang

  • Beijing Normal University

External person

B. C. Luo

  • University of New South Wales

External person

Henhui Cai

  • Shantou Institute of Ultrasonic Instrument

External person

Lu Qi

  • North Carolina State University

External person

Chun Gang Duan

  • East China Normal University

External person

S. C. Cheng

  • Northwestern University
  • University of Oklahoma

External person

Lining Zhang

  • Hong Kong University of Science and Technology

External person

K. P. Yap

  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore
  • Chartered Semiconductor Manufacturing Ltd.

External person

Guangheng Wu

  • CAS - Institute of Physics

External person

J. G. Wan

  • Nanjing University

External person

B. L. Huang

  • Hong Kong University of Science and Technology

External person

Shailesh Redkar

  • Chartered Semiconductor Manufacturing Ltd.

External person

Shilei Liu

  • Nanjing University

External person

Ming Wu

  • Xi'an Jiaotong University
  • National University of Singapore

External person

B. C. Zhang

  • Chartered Semiconductor Manufacturing Ltd.

External person

Qiufan Chen

  • Chongqing University

External person

Yongming Huang

  • Southeast University, Nanjing
  • Purple Mountain Laboratories
  • Central South University

External person

Shiye Wang

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Dong Wook Kim

  • Ewha Womans University
  • Sungkyunkwan University

External person

J. S. Pan

  • Agency for Science, Technology and Research, Singapore
  • China State Construction

External person

Huixia Zhao

  • Shenzhen Institute of Advanced Technology

External person

Xincheng Xie

  • Peking University
  • Chinese Academy of Sciences

External person

Wen Zhang

  • University of Southern California
  • Northwestern Polytechnical University Xian
  • National University of Singapore
  • The University of Hong Kong
  • East China Normal University

External person

Hongxia Ou

  • Chongqing University

External person

Z. Fan

  • Northeastern University China
  • Renmin University of China
  • Chinese Academy of Surveying and Mapping

External person

J. A. Belot

  • Northwestern University

External person

C. H. Chan

  • The Hong Kong Polytechnic University
  • The University of Hong Kong

External person

Z. W. Li

  • Central South University

External person

Hui Ye

  • Zhejiang University
  • University of Shanghai for Science and Technology

External person

Qinwo Shen

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Xiaojie Lou

  • Xi'an Jiaotong University

External person

S. W. Cheong

  • Rutgers - The State University of New Jersey, New Brunswick

External person

Jia Lin Sun

  • Tsinghua University

External person

Eddie Er

  • Chartered Semiconductor Manufacturing Ltd.

External person

Z. Xiong

  • The University of Hong Kong

External person

R. Jiang

  • Monash University
  • Donghua University
  • Southern University of Science and Technology

External person

Dengdong Fan

  • Wuhan University

External person

Hengqiang Ye

  • CAS - Institute of Metal Research

External person

G. P. Feng

  • Tsinghua University

External person

Ruibin Jiang

  • Chinese University of Hong Kong

External person

Xu Fang

  • Zhejiang University
  • University of Southampton
  • Shenzhen University

External person

Haeri Kim

  • Ewha Womans University
  • Korea Institute of Science and Technology

External person

Z. T. Zhang

  • Tsinghua University

External person

Aidong Li

  • Nanjing University

External person

Ming Li

  • ASM Pacific Technology Limited
  • China University of Petroleum (East China)
  • Inner Mongolia University for Nationalities
  • Eye Hospital of Wenzhou Medical University
  • Nanjing University
  • The University of Hong Kong
  • Guangzhou Medical College
  • South China Normal University
  • Jinan University
  • CRRC Corporation Limited
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China

External person

J. L. Schindler

  • Northwestern University

External person

Y. B. Lin

  • South China Normal University

External person

Chunru Liu

  • The Hong Kong Polytechnic University

External person

Chang Lu

  • University of Electronic Science and Technology of China

External person

Meifeng Liu

  • Nanjing University

External person

T. L. Li

  • Nanjing University
  • CAS - International Center for Material Physics

External person

Y. L. Xie

  • Nanjing University

External person

C. Lin

  • Chinese University of Hong Kong

External person

Cong Li

  • The University of Hong Kong
  • Fudan University
  • Peking University
  • Huaqiao University

External person

C. R. Kannewurf

  • Northwestern University

External person

Yiyang Y. Zhang

  • Southwest University

External person

Shuxia Wang

  • CAS - Wuhan Institute of Physics and Mathematics

External person

F. H. Kaatz

  • Northwestern University

External person

Kuiyi Hu

  • China University of Geosciences, Wuhan

External person

Hao Deng

  • CAS - Shanghai Institute of Ceramics
  • Beihang University

External person

Jieji Ruan

  • Nanjing University

External person

M. H. Liang

  • Nanyang Technological University

External person

Lu Wei

  • Jiangsu Normal University

External person

Chi Sin Tang

  • National University of Singapore
  • Agency for Science, Technology and Research, Singapore

External person

H. B. Lu

  • CAS - Institute of Physics

External person

Dan Shan

  • Donghua University

External person

Y. F. Chong

  • National University of Singapore

External person

H. G. Jiang

  • CAS - Institute of Metal Research

External person

Yaonan Zhang

  • Northeastern University
  • Xi'an Siyuan University

External person

Wei Min Jiang

  • Beijing Normal University

External person

Xiang Liu

  • Northwestern University
  • United States Department of Energy
  • Tsinghua University
  • CAS - Guangzhou Institute of Geochemistry
  • University of Chinese Academy of Sciences
  • South China Normal University
  • Nanjing Tech University
  • The University of Hong Kong
  • China University of Mining and Technology

External person

Ctirad Uher

  • University of Michigan, Ann Arbor

External person

Peng Lin

  • Tsinghua University
  • Shenzhen University
  • Anhui University of Technology
  • CAS - Lanzhou Institute of Chemical Physics
  • Southwest Jiaotong University
  • The University of Hong Kong

External person

Qinhui Zhang

  • CAS - Shanghai Institute of Ceramics
  • University of Chinese Academy of Sciences
  • Chinese Academy of Sciences

External person

L. C. Yu

  • Nanjing University
  • CAS - International Center for Material Physics

External person

Jizhi Cheng

  • Northwestern University

External person

Shijie Xu

  • The University of Hong Kong

External person

Liyang Chi

  • Shenzhen Institute of Advanced Technology

External person

Jianfeng Yao

  • Monash University

External person

Kirk K. Shung

  • University of Southern California

External person

Zhitang Song

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Jin An

  • Chinese University of Hong Kong

External person

Ning Wang

  • School of Environmental and Biological Science and Technology

External person

Yue Wen Fang

  • East China Normal University

External person

T. D. Corrigan

  • Northwestern University

External person

Z. F. Di

  • Chinese Academy of Sciences

External person

Yucheng Wua

  • Hefei University of Technology

External person

Y. C. Li

  • The University of Hong Kong

External person

Z. X. Lu

  • South China Normal University

External person

Weizheng Liang

  • University of Electronic Science and Technology of China

External person

Aijun Hong

  • Nanjing University

External person

Q. Y. Chen

  • Chinese Academy of Sciences

External person

John A. Belot

  • Northwestern University

External person

Kunyan Yang

  • Chongqing University

External person

Ni Hu

  • Hubei University of Technology

External person

C. L. Sun

  • Wuhan University

External person

K. C. Hung

  • City University of Hong Kong

External person

Filip Ligmajer

  • Brno University of Technology
  • The Hong Kong Polytechnic University

External person

Jian Wang

  • China Academy of Engineering Physics
  • Nanjing Agricultural University
  • Fuzhou University
  • Seoul National University
  • Beijing Jiaotong University
  • Anhui University of Chinese Medicine
  • University of Science and Technology of China
  • Peking University
  • Chinese Academy of Sciences
  • Beijing Academy of Quantum Information Sciences
  • Shenzhen Nanshan Center for Chronic Disease Control
  • Wuhan University of Technology
  • Taishan University
  • Huazhong University of Science and Technology
  • National Simulation Training Center for National Economy Mobilization
  • Key Laboratory of Image Processing and Intelligent Control

External person

S. J. Pennycook

  • Oak Ridge National Laboratory

External person

Paul R. Markworth

  • Northwestern University

External person

X. C. Xie

  • Peking University
  • Chinese Academy of Sciences

External person

F. Tang

  • The University of Hong Kong

External person

X. G. Gong

  • Fudan University

External person

Qing Wan

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Yujiao Zhu

  • Shandong University
  • CAS - Guangzhou Institute of Geochemistry

External person

Dawei Meng

  • China University of Geosciences, Wuhan

External person

Jinqian Q. Huo

  • Southwest University

External person

Z. C. Su

  • The University of Hong Kong

External person

C. F. Li

  • Nanjing University

External person

N. Wang

  • Hong Kong University of Science and Technology

External person

Y. F. Lu

  • National University of Singapore

External person

Huijun Liu

  • Chongqing University
  • Wuhan University

External person

H. G. Ye

  • The University of Hong Kong
  • Xi'an Jiaotong University

External person

Jiawang Hong

  • Beijing Institute of Technology

External person

M. S. Moreno

  • Comisión Nacional de Energía Atómica

External person

Xiangnan Gong

  • Chongqing University

External person

H. Wang

  • Hong Kong Baptist University

External person

G. H. Shi

  • Nanjing University
  • CAS - International Center for Material Physics
  • South China University of Technology

External person

M. He

  • CAS - Institute of Physics

External person

Peitian Mu

  • Shenzhen Institute of Advanced Technology

External person

Dangyuan Lei

  • City University of Hong Kong

External person

Lanjian Zhuge

  • Soochow University

External person

R. J. McNeely

  • Northwestern University

External person

Kan Li

  • Zhejiang University
  • Nanjing University
  • The Hong Kong Polytechnic University

External person

Andrew Thye Shen Wee

  • National University of Singapore
  • Centre for Advanced 2D Materials

External person

M. Hoffman

  • University of New South Wales

External person

Baoqiang Liu

  • Soochow University
  • Shenzhen Institute of Advanced Technology
  • Chinese Academy of Sciences

External person

Y. M. Xu

  • Chinese University of Hong Kong

External person

Yuedong Yan

  • University of Science and Technology of China

External person

M. P. Chudzik

  • Northwestern University

External person

Xianyi Gu

  • Shenzhen Institute of Advanced Technology

External person

Y. Yan

  • Oak Ridge National Laboratory
  • Nanjing University

External person

A. Sameer

  • Chartered Semiconductor Manufacturing Ltd.

External person

G. Q. Li

  • Southwest University
  • Tongji University

External person

L. H. Xu

  • Anhui Architectural Engineering College

External person

Huichao Wang

  • Sun Yen-sat University

External person

Chuanying Xi

  • Chinese Academy of Sciences

External person

H. J. Peng

  • National University of Singapore

External person

Hai Wang

  • The University of Hong Kong
  • PLA University of Science and Technology
  • Singapore Management University
  • Carnegie Mellon University

External person

Stephen J. Pennycook

  • National University of Singapore

External person

Guanping Feng

  • Tsinghua University

External person

Y. C. Zhao

  • Harbin Institute of Technology
  • Shanghai Jiao Tong University

External person

H. Z. Zeng

  • University of Electronic Science and Technology of China

External person

L. Chen

  • Tianjin EPRI Measurement Center

External person

Guang Han

  • Chongqing University

External person

Z. F. Ren

  • University of Houston

External person

Zhicheng Su

  • The University of Hong Kong
  • Southeast University, Nanjing
  • Australian National University

External person

C. Kong

  • University of New South Wales

External person

Y. C. Chan

  • City University of Hong Kong

External person

B. Z. Ding

  • CAS - Institute of Metal Research

External person

Zhitian Zhang

  • Tsinghua University

External person

Bae Ho Park

  • Konkuk University

External person

Luo Suhua

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Yanxiong Yu

  • Shantou Institute of Ultrasonic Instruments Co., Ltd.

External person

H. J. Fang

  • Tsinghua University

External person

Dong Zhang

  • Fuzhou University

External person

A. R. Krauss

  • Argonne National Laboratory

External person

Minhui Qin

  • South China Normal University

External person

Qingwen Yue

  • CAS - Shanghai Institute of Ceramics
  • University of Chinese Academy of Sciences
  • Chinese Academy of Sciences

External person

Xiaodong Han

  • Nanjing University
  • Beijing University of Technology

External person

H. Y. Tong

  • CAS - Institute of Metal Research

External person

Q. Lou

  • Zhengzhou University

External person