• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
1993 …2020

Research activity per year

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Network

Yan Chen

  • Harbin Institute of Technology

External person

R. P.H. Chang

  • Northwestern University

External person

H. C. Ong

  • Northwestern University

External person

C. L. Choy

  • The Hong Kong Polytechnic University
  • Chinese University of Hong Kong

External person

D. Zhou

  • CAS - Shanghai Institute of Ceramics

External person

H. S. Luo

  • CAS - Shanghai Institute of Ceramics

External person

S. Redkar

  • Chartered Semiconductor Manufacturing Ltd.

External person

J. M. Liu

  • Nanjing University

External person

D. X. Li

  • CAS - Institute of Metal Research

External person

Xiaoyuan Zhou

  • Chongqing University

External person

D. Mangelinck

  • Agency for Science, Technology and Research

External person

Min Zeng

  • South China Normal University

External person

X. Y. Qiu

  • Southwest University

External person

Weibao Qiu

  • Shenzhen Institute of Advanced Technology

External person

H. Q. Ye

  • CAS - Institute of Metal Research

External person

X. Zhao

  • Hong Kong Baptist University
  • Tongji University

External person

Haosu Luo

  • Chinese Academy of Sciences
  • CAS - Shanghai Institute of Ceramics

External person

K. L. Pey

  • National University of Singapore

External person

Zhi Yong Bao

  • The Hong Kong Polytechnic University
  • Hefei University of Technology

External person

X. B. Lu

  • CAS - Institute of Physics

External person

Guoyu Wang

  • Chinese Academy of Sciences

External person

Qiang Li

  • Wuhan Institute of Technology
  • Kwai
  • Y-tech
  • New York University
  • South China Agricultural University
  • Guangzhou Medical College

External person

A. A. Setlur

  • Northwestern University

External person

X. Liu

  • University of Southampton
  • National Taiwan University

External person

S. Ansari

  • Chartered Semiconductor Manufacturing Ltd.

External person

Jun Ming Liu

  • Nanjing University

External person

S. K. Lahiri

  • Agency for Science, Technology and Research

External person

J. M. Lauerhaas

  • Northwestern University

External person

Dan Zhou

  • Zhejiang Gongshang University
  • Hong Kong University of Science and Technology

External person

J. T. Guo

  • CAS - Institute of Metal Research

External person

Z. P. Xing

  • CAS - Institute of Metal Research

External person

Chi, D. Z.

  • 3 Research Link

External person

Huajing Fang

  • Tsinghua University

External person

D. Y. Wang

  • University of New South Wales

External person

J. Wang

  • Zhejiang University

External person

Xiaodan Tang

  • Chongqing University
  • Chinese Academy of Sciences

External person

J. Ding

  • National University of Singapore

External person

P. S. Lee

  • National University of Singapore

External person

Lijie Guo

  • Chongqing University

External person

T. Osipowicz

  • National University of Singapore

External person

S. F. Tee

  • Chartered Semiconductor Manufacturing Ltd.

External person

Yucheng Wu

  • Hefei University of Technology
  • Key Laboratory of Advanced Functional Materials and Devices of Anhui Province
  • Taiyuan University of Technology

External person

Kunling Peng

  • Chongqing University
  • Chinese Academy of Sciences

External person

Xu Lu

  • Chongqing University

External person

Z. Zhang

  • Tianjin University

External person

C. L. Tay

  • Chartered Semiconductor Manufacturing Ltd.

External person

Z. G. Song

  • Chartered Semiconductor Manufacturing Ltd.

External person

J. X. Zhang

  • Sun Yat-Sen University

External person

Qifa Zhou

  • University of Southern California

External person

Hairong Zheng

  • Shenzhen Institute of Advanced Technology
  • Chinese Academy of Sciences

External person

Qingfeng Yan

  • Tsinghua University

External person

L. T. Li

  • Beijing University of Technology
  • Southwest University

External person

Zhongnan Xi

  • Qingdao University

External person

L. G. Yu

  • Chinese Academy of Sciences

External person

Z. Q. Hu

  • CAS - Institute of Metal Research

External person

Xingsen Gao

  • South China Normal University

External person

Dongsheng Sun

  • Shandong Normal University

External person

Xin Liu

  • Hong Kong Baptist University

External person

Quan Li

  • Chinese University of Hong Kong

External person

Fengzhao Li

  • Shandong Normal University

External person

Zhang Zhang

  • South China Normal University

External person

E. Er

  • Chartered Semiconductor Manufacturing Ltd.

External person

Zhang, G. J.

  • China Building Materials Academy

External person

H. Li

  • University of California at Davis
  • KTH Royal Institute of Technology

External person

Z. B. Yan

  • Nanjing University

External person

Xinyi Zhang

  • Monash University
  • Hong Kong University of Science and Technology

External person

T. Zhang

  • The University of Hong Kong
  • Southwest University

External person

C. W. Lai

  • Chartered Semiconductor Manufacturing Ltd.

External person

Xubing Lu

  • South China Normal University

External person

A. See

  • Chartered Semiconductor Manufacturing Ltd.

External person

Douxing Li

  • Shandong Normal University

External person

Juan Wang

  • Chinese University of Hong Kong

External person

Y. G. Wang

  • Norwegian University of Science and Technology

External person

Guiwen Wang

  • Chongqing University
  • Chinese Academy of Sciences

External person

Huanting Wang

  • Monash University

External person

S. Li

  • Lakehead University

External person

T. C. Lei

  • Harbin Institute of Technology

External person

Guo Tian

  • South China Normal University

External person

R. X. Wang

  • The University of Hong Kong

External person

Yanci Yan

  • Chongqing University

External person

Chunyan Zheng

  • Qingdao University

External person

Zengxing Lu

  • South China Normal University

External person

W. Huang

  • Sun Yat-Sen University

External person

G. D. Zhou

  • Southwest University

External person

P. R. Markworth

  • Northwestern University

External person

T. J. Marks

  • Northwestern University

External person

G. Y. An

  • Harbin Institute of Technology

External person

Dongyuan Zhao

  • Monash University
  • Fudan University

External person

Yan Wang

  • University of Southern California
  • CAS - Nanjing Institute of Geography and Limnology
  • Nanjing EasySensor Environmental Technology Co., Ltd
  • Nanjing Easysensor Environmental Technology Company, Limited

External person

L. Chan

  • Chartered Semiconductor Manufacturing Ltd.

External person

X. Y. Zhou

  • Chinese University of Hong Kong

External person

K. H. Wong

  • Queen Elizabeth Hospital Hong Kong

External person

Qing Ao

  • Shandong University of Technology

External person

X. S. Meng

  • Southwest University

External person

F. Ye

  • Harbin Institute of Technology

External person

Minghui Qin

  • South China Normal University

External person

C. Zhang

  • The University of Hong Kong
  • Fujian Medical University
  • Aalborg University

External person

R. P H Chang

  • Northwestern University

External person

Fan Zhang

  • Tsinghua University
  • Sun Yat-Sen University
  • Shenzhen University
  • Wuhan University

External person

Z. R. Guo

  • Chartered Semiconductor Manufacturing Ltd.

External person

H. Cao

  • Northwestern University

External person

Zhongwen Li

  • South China Normal University

External person

Zhiyong Bao

  • Hefei University of Technology

External person

C. S. Ho

  • National University of Singapore

External person

Z. X. Jin

  • CAS - Institute of Metal Research

External person

Yong Wang

  • National University of Defense Technology
  • Guangdong University of Technology
  • Zhejiang University

External person

K. Shung

  • University of Southern California

External person

He Tian

  • East China University of Science and Technology

External person

Guifang Dong

  • Tsinghua University

External person

Minglong Wei

  • Southwest University

External person

Yang Xiao

  • Shenzhen Institute of Advanced Technology
  • Guangdong Academy of Agricultural Sciences
  • The Hong Kong Polytechnic University
  • Chongqing University

External person

Deyang Chen

  • South China Normal University

External person

Junxiang Yao

  • South China Normal University

External person

H. X. Yang

  • CAS - Institute of Physics

External person

W. L. Liu

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

W. B. Qiu

  • Chinese Academy of Sciences

External person

Tian Ling Ren

  • Tsinghua University

External person

Forrest H. Kaatz

  • Northwestern University

External person

Carl R. Kannewurf

  • Northwestern University

External person

Jing Li

  • National Geomatics Center of China
  • CAS - Changchun Institute of Applied Chemistry
  • University of Chinese Academy of Sciences
  • Sichuan University
  • Chinese Academy of Sciences
  • Hebei Mental Health Center
  • Shanxi University

External person

S. K. Loh

  • Chartered Semiconductor Manufacturing Ltd.

External person

C. K. Oh

  • Chartered Semiconductor Manufacturing Ltd.

External person

Y. G. Zhao

  • Northwestern University

External person

Jian Wang

  • Peking University
  • Chinese Academy of Sciences

External person

K. Kirk Shung

  • IEEE
  • University of Southern California

External person

Heng Zhan

  • Chongqing University

External person

A. T.S. Wee

  • National University of Singapore

External person

X. F. Wang

  • Chinese University of Hong Kong

External person

Shujin Huang

  • North Carolina State University

External person

Peilian Li

  • South China Normal University

External person

Laure Bourgeois

  • Monash University

External person

Yu Wang

  • National Taiwan University
  • Shenzhen University
  • North China Electric Power University, Baoding
  • Chinese Academy of Medical Sciences
  • Nanchang University
  • Nanyang Technological University
  • Guangzhou University

External person

S. Y. Zhang

  • Southwest University

External person

W. Liu

  • Wuhan Center of Environmental Monitoring

External person

Z. T. Song

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Michael P. Chudzik

  • Northwestern University

External person

Jiaqiang Yan

  • Oak Ridge National Laboratory

External person

Xiaoning Jiang

  • North Carolina State University

External person

M. L. Wei

  • Southwest University

External person

C. S. Teh

  • Chartered Semiconductor Manufacturing Ltd.

External person

Junfeng Wang

  • Huazhong University of Science and Technology

External person

X. P. Jiang

  • Jingdezhen Ceramic Institute
  • Elliott Mastology Center

External person

J. Peng

  • Wuhan University

External person

X. M. Wan

  • CAS - Shanghai Institute of Ceramics

External person

Wei Zhang

  • Lund University
  • Civil Aviation University of China
  • City University of Hong Kong
  • Shandong University
  • Beijing University of Technology
  • Chongqing University
  • Sichuan University
  • IAPCM

External person

Qiao Jin

  • Qingdao University

External person

Xiao Song

  • University of Washington

External person

J. Y. Wu

  • Northwestern University

External person

Dandan Xie

  • Chongqing University

External person

Tobin J. Marks

  • Northwestern University

External person

Yongjie Liu

  • Huazhong University of Science and Technology

External person

Paul A. Webley

  • Monash University

External person

C. M. Wong

  • The University of Hong Kong

External person

Chao Zhang

  • Hirosaki University
  • CAS - Institute of Chemistry
  • Nanjing University of Aeronautics and Astronautics
  • Rice University
  • Tianjin University of Technology
  • Chinese Academy of Sciences
  • Nankai University

External person

Yidong Hou

  • Sichuan University

External person

Robert P.H. Chang

  • Northwestern University

External person

Liang Li

  • Central South University
  • Peking University
  • Huazhong University of Science and Technology
  • Nanjing University of Posts and Telecommunications
  • NYU Abu Dhabi

External person

Lina Zhao

  • South China Normal University

External person

Haiwen Liu

  • Beijing Normal University

External person

Jin, Z. Z.

  • China Building Materials Academy

External person

Yingni Gu

  • Shandong University of Technology

External person

Hongying Peng

  • CAS - Institute of Metal Research

External person

Douglas R. MacFarlane

  • Monash University

External person

P. L. Washington

  • Northwestern University

External person

G. Qian

  • Chartered Semiconductor Manufacturing Ltd.

External person

Q. H. Wang

  • Northwestern University

External person

Fengyuan Zhang

  • South China Normal University

External person

Nianqing Fu

  • Peking University
  • South China University of Technology
  • The Hong Kong Polytechnic University

External person

Hua Fan

  • South China Normal University

External person

Jinwei Gao

  • South China Normal University

External person

Min Su

  • Shenzhen Institute of Advanced Technology
  • Dalian Maritime University

External person

David Mandrus

  • Oak Ridge National Laboratory
  • University of Tennessee, Knoxville

External person

D. B. Buchholz

  • Northwestern University

External person

Y. B. Qin

  • CAS - Institute of Physics

External person

Jun Liu

  • Zhejiang University
  • Xi'an Jiaotong University
  • CAS - National Astronomical Observatories
  • Max Planck Institute for Radio Astronomy
  • South China University of Technology

External person

Aijuan Zhang

  • Chongqing University

External person

Y. T. Tu

  • National Sun Yat-sen University

External person

Lijing Zhang

  • Tsinghua University

External person

Jiang Jiang

  • Shandong University of Technology

External person

Chaojing Lu

  • Qingdao University

External person

J. H. Zhang

  • Wuhan University of Technology

External person

Tianling Ren

  • Tsinghua University

External person

Wu, Jinchuan

  • Shantou Institute of Ultrasonic Instruments Co., Ltd.

External person

H. Ji

  • University of Electronic Science and Technology of China

External person

A. Wang

  • Northwestern University
  • China University of Geosciences, Wuhan

External person

Meng Zhao

  • Changzhou University

External person

Zhen Fan

  • South China Normal University

External person

Yongcheng Zhang

  • Qingdao University

External person

K. K. Shung

  • University of Southern California

External person

E. W. Seelig

  • Northwestern University

External person

Changgan Zeng

  • University of Science and Technology of China

External person

Guofeng Li

  • Shenzhen Institute of Advanced Technology

External person

Xiaoyan Y. Qiu

  • Southwest University

External person

S. Yoshimura

  • Japan Science and Technology Agency

External person

Shuai Dong

  • Southeast University, Nanjing
  • Harbin Institute of Technology

External person

A. J. Hong

  • Nanjing University

External person

W. B. Wu

  • University of Science and Technology of China

External person

J. Q. Li

  • CAS - Institute of Physics

External person

Chao Xu

  • Tianjin University
  • Southern Medical University

External person

W. Fan

  • Northwestern University

External person

Di Wu

  • Zhengzhou University
  • Nanjing Medical University

External person

Jinxing Zhang

  • Beijing Normal University

External person

B. C. Luo

  • University of New South Wales

External person

Cai, Henhui

  • Shantou Institute of Ultrasonic Instrument

External person

Lu Qi

  • North Carolina State University

External person

Chun Gang Duan

  • East China Normal University

External person

S. C. Cheng

  • Northwestern University

External person

Lining Zhang

  • Hong Kong University of Science and Technology

External person

K. P. Yap

  • National University of Singapore
  • Agency for Science, Technology and Research
  • Chartered Semiconductor Manufacturing Ltd.

External person

Guangheng Wu

  • CAS - Institute of Physics

External person

J. G. Wan

  • Nanjing University

External person

B. L. Huang

  • Hong Kong University of Science and Technology

External person

Shailesh Redkar

  • Chartered Semiconductor Manufacturing Ltd.

External person

Shilei Liu

  • Nanjing University

External person

B. C. Zhang

  • Chartered Semiconductor Manufacturing Ltd.

External person

Qiufan Chen

  • Chongqing University

External person

Yongming Huang

  • Southeast University, Nanjing
  • Purple Mountain Laboratories

External person

Shiye Wang

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Dong Wook Kim

  • Ewha Womans University

External person

J. S. Pan

  • Agency for Science, Technology and Research
  • China State Construction

External person

Huixia Zhao

  • Shenzhen Institute of Advanced Technology

External person

Xincheng Xie

  • Peking University
  • Chinese Academy of Sciences

External person

Hongxia Ou

  • Chongqing University

External person

Z. Fan

  • Northeastern University China

External person

J. A. Belot

  • Northwestern University

External person

C. H. Chan

  • The Hong Kong Polytechnic University

External person

Hui Ye

  • Zhejiang University

External person

Yanan Li

  • Peking University

External person

Qinwo Shen

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

S. W. Cheong

  • Rutgers - The State University of New Jersey, New Brunswick

External person

Jia Lin Sun

  • Tsinghua University

External person

Eddie Er

  • Chartered Semiconductor Manufacturing Ltd.

External person

Z. Xiong

  • The University of Hong Kong

External person

Dengdong Fan

  • Wuhan University

External person

Hengqiang Ye

  • CAS - Institute of Metal Research

External person

G. P. Feng

  • Tsinghua University

External person

Ruibin Jiang

  • Chinese University of Hong Kong

External person

Xu Fang

  • Zhejiang University
  • University of Southampton

External person

Haeri Kim

  • Ewha Womans University
  • Korea Institute of Science and Technology

External person

Z. T. Zhang

  • Tsinghua University

External person

Aidong Li

  • Nanjing University

External person

J. L. Schindler

  • Northwestern University

External person

Y. B. Lin

  • South China Normal University

External person

Chunru Liu

  • The Hong Kong Polytechnic University

External person

Chang Lu

  • University of Electronic Science and Technology of China

External person

Meifeng Liu

  • Nanjing University

External person

T. L. Li

  • Nanjing University
  • CAS - International Center for Material Physics

External person

Y. L. Xie

  • Nanjing University

External person

C. Lin

  • Chinese University of Hong Kong

External person

Cong Li

  • The University of Hong Kong
  • Fudan University

External person

C. R. Kannewurf

  • Northwestern University

External person

Yiyang Y. Zhang

  • Southwest University

External person

Shuxia Wang

  • CAS - Wuhan Institute of Physics and Mathematics

External person

F. H. Kaatz

  • Northwestern University

External person

Kuiyi Hu

  • China University of Geosciences, Wuhan

External person

Hao Deng

  • CAS - Shanghai Institute of Ceramics
  • Beihang University

External person

Jieji Ruan

  • Nanjing University

External person

M. H. Liang

  • Nanyang Technological University

External person

Lu Wei

  • Jiangsu Normal University

External person

H. B. Lu

  • CAS - Institute of Physics

External person

Dan Shan

  • Donghua University

External person

Y. F. Chong

  • National University of Singapore

External person

H. G. Jiang

  • CAS - Institute of Metal Research

External person

Yaonan Zhang

  • Northeastern University
  • Xi'an Siyuan University

External person

Xiang Liu

  • Northwestern University
  • United States Department of Energy
  • Tsinghua University
  • CAS - Guangzhou Institute of Geochemistry
  • University of Chinese Academy of Sciences

External person

Ctirad Uher

  • University of Michigan, Ann Arbor

External person

Peng Lin

  • Tsinghua University
  • Shenzhen University
  • Anhui University of Technology

External person

Qinhui Zhang

  • CAS - Shanghai Institute of Ceramics
  • University of Chinese Academy of Sciences

External person

L. C. Yu

  • Nanjing University
  • CAS - International Center for Material Physics

External person

Jizhi Cheng

  • Northwestern University

External person

Shijie Xu

  • The University of Hong Kong

External person

Liyang Chi

  • Shenzhen Institute of Advanced Technology

External person

Jianfeng Yao

  • Monash University

External person

Kirk K. Shung

  • University of Southern California

External person

Zhitang Song

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Jin An

  • Chinese University of Hong Kong

External person

Wang, Ning

  • School of Environmental and Biological Science and Technology

External person

Yue Wen Fang

  • East China Normal University

External person

T. D. Corrigan

  • Northwestern University

External person

Z. F. Di

  • Chinese Academy of Sciences

External person

Yucheng Wua

  • Hefei University of Technology

External person

Y. C. Li

  • The University of Hong Kong

External person

Z. X. Lu

  • South China Normal University

External person

Weizheng Liang

  • University of Electronic Science and Technology of China

External person

Aijun Hong

  • Nanjing University

External person

Q. Y. Chen

  • Chinese Academy of Sciences

External person

John A. Belot

  • Northwestern University

External person

Ni Hu

  • Hubei University of Technology

External person

C. L. Sun

  • Wuhan University

External person

K. C. Hung

  • City University of Hong Kong

External person

Filip Ligmajer

  • Brno University of Technology

External person

S. J. Pennycook

  • Oak Ridge National Laboratory

External person

Paul R. Markworth

  • Northwestern University

External person

X. C. Xie

  • Peking University
  • Chinese Academy of Sciences

External person

F. Tang

  • The University of Hong Kong

External person

X. G. Gong

  • Fudan University

External person

Qing Wan

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Yujiao Zhu

  • Shandong University
  • CAS - Guangzhou Institute of Geochemistry

External person

Dawei Meng

  • China University of Geosciences, Wuhan

External person

Jinqian Q. Huo

  • Southwest University

External person

Z. C. Su

  • The University of Hong Kong

External person

C. F. Li

  • Nanjing University

External person

N. Wang

  • Hong Kong University of Science and Technology

External person

Y. F. Lu

  • National University of Singapore

External person

Huijun Liu

  • Chongqing University
  • Wuhan University

External person

H. G. Ye

  • The University of Hong Kong
  • Xi'an Jiaotong University

External person

Jiawang Hong

  • Beijing Institute of Technology

External person

M. S. Moreno

  • Comisión Nacional de Energía Atómica

External person

H. Wang

  • Hong Kong Baptist University

External person

G. H. Shi

  • Nanjing University
  • CAS - International Center for Material Physics

External person

M. He

  • CAS - Institute of Physics

External person

Peitian Mu

  • Shenzhen Institute of Advanced Technology

External person

Lanjian Zhuge

  • Soochow University

External person

R. J. McNeely

  • Northwestern University

External person

Kan Li

  • Zhejiang University
  • Nanjing University

External person

M. Hoffman

  • University of New South Wales

External person

Baoqiang Liu

  • Soochow University

External person

Y. M. Xu

  • Chinese University of Hong Kong

External person

Yuedong Yan

  • University of Science and Technology of China

External person

M. P. Chudzik

  • Northwestern University

External person

Xianyi Gu

  • Shenzhen Institute of Advanced Technology

External person

Y. Yan

  • Oak Ridge National Laboratory

External person

A. Sameer

  • Chartered Semiconductor Manufacturing Ltd.

External person

G. Q. Li

  • Southwest University
  • Tongji University

External person

Yanzhao Liu

  • Peking University

External person

Xu, L. H.

  • Anhui Architectural Engineering College

External person

Chuanying Xi

  • Chinese Academy of Sciences

External person

H. J. Peng

  • National University of Singapore

External person

Hai Wang

  • The University of Hong Kong
  • PLA University of Science and Technology

External person

Guanping Feng

  • Tsinghua University

External person

Y. C. Zhao

  • Harbin Institute of Technology
  • Shanghai Jiao Tong University

External person

H. Z. Zeng

  • University of Electronic Science and Technology of China

External person

L. Chen

  • Tianjin EPRI Measurement Center

External person

Guang Han

  • Chongqing University

External person

Z. F. Ren

  • University of Houston

External person

Zhicheng Su

  • The University of Hong Kong

External person

C. Kong

  • University of New South Wales

External person

Y. C. Chan

  • City University of Hong Kong

External person

B. Z. Ding

  • CAS - Institute of Metal Research

External person

Zhitian Zhang

  • Tsinghua University

External person

Bae Ho Park

  • Konkuk University

External person

Luo Suhua

  • CAS - Shanghai Institute of Microsystem and Information Technology

External person

Yu, Yanxiong

  • Shantou Institute of Ultrasonic Instruments Co., Ltd.

External person

H. J. Fang

  • Tsinghua University

External person

A. R. Krauss

  • Argonne National Laboratory

External person

Minhui Qin

  • South China Normal University

External person

Qingwen Yue

  • CAS - Shanghai Institute of Ceramics
  • University of Chinese Academy of Sciences

External person

Xiaodong Han

  • Nanjing University

External person

H. Y. Tong

  • CAS - Institute of Metal Research

External person

Q. Lou

  • Zhengzhou University

External person

Jianfang Wang

  • Chinese University of Hong Kong

External person

Bangxin Zhou

  • Nuclear Power Institute of China

External person

J. Y. Tang

  • The University of Hong Kong

External person

L. H. Chan

  • Chartered Semiconductor Manufacturing Ltd.

External person

J. Cheng

  • Chinese University of Hong Kong

External person

Dingfeng Yang

  • Beijing University of Technology

External person

Z. G. Liu

  • Nankai University

External person

Yong Zheng

  • Chongqing University

External person

Kangrong Huang

  • South China Normal University

External person

Si Hui

  • University of Michigan, Ann Arbor

External person

Shinichi Takeuchi

  • Toin University of Yokohama

External person

D. Bruce Buchholz

  • Northwestern University

External person

Liduo Wang

  • Tsinghua University

External person

Qiang Fu

  • Shenzhen Institute of Advanced Technology
  • Northeastern University
  • Sichuan University
  • China National Environmental Monitoring Center
  • University of British Columbia

External person

Zhigang Song

  • Chartered Semiconductor Manufacturing Ltd.

External person

Yingyue Wang

  • Southwest University

External person