As vehicle technology continues to advance, third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are playing a critical role in new energy vehicle systems. Compared to traditional silicon semiconductors, SiC and GaN have higher bandgaps, better high-temperature tolerance and higher frequency characteristics, which can significantly improve the efficiency of power systems and reduce power consumption and weight.
These excellent performance characteristics have brought revolutionary improvements to new energy vehicles. Driving range has increased significantly; acceleration performance is more outstanding; and the overall vehicle is lighter and safer. Third-generation semiconductors are becoming a key driving force to propel new energy vehicles towards a more efficient and smarter future.
Period
14 Aug 2024
Event title
ASIH Seminar- 3rd Generation Semiconductor for New Energy Vehicles Development